Fig. 1. Core/shell (a) and inverted core/shell (b) structures of QDs.

Fig. 2. Plots of binding energy of exciton state in GaN/Al_xGa_1−xN core/shell QD versus core radius R₁ for different values of shell R₂. The Al content x is chosen to be 0.3.

Fig. 3. Variation of (a) radiative lifetime and (b) overlap integral of exciton state in GaN/Al_xGa_1−xN core/shell QD with core size R₁ and shell size R₂, with Al content x chosen to be 0.3.

Fig. 4. (a) Variations of OAC of exciton state in GaN/Al_xGa_1−xN core/shell QD with photon energy under different values of core size R₁ at shell size R₂ = 10 nm, and (b) variation of overlap integral of exciton state in GaN/Al_xGa_1−xN core/shell QD with core size R₁ at R₂ = 10 nm, with Al content x chosen to be 0.3.

Fig. 5. Variations of binding energy of exciton state in Al_xGa_1−xN/GaN inverted core/shell QD with core size R₁ for different values of shell size R₂, with Al content x chosen to be 0.3.

Fig. 6. Variations of (a) radiative lifetime and (b) overlap integral of exciton state in Al_xGa_1−xN/GaN inverted core/shell QD with core size R₁ for different values of shell size R₂, with Al content x chosen to be 0.3.

Fig. 7. (a) Variations of OAC of exciton state in Al_xGa_1−xN/GaN inverted core/shell QD with photon energy for different values of core size R₁ at R₂ = 10 nm (a), and (b) variastion of overlap integral of exciton state in Al_xGa_1−xN/GaN inverted core/shell QD with the core size R₁ at R₂ = 10 nm (b), with Al content x chosen to be 0.3.

Table 1. Parameters used in calculation.