Progress of radiation effects of silicon photonics devices

Yue Zhou; Zhi-Yuan Hu; Da-Wei Bi; Ai-Min Wu

doi:10.7498/aps.68.20190543

Journals >Acta Physica Sinica >Volume 68 >Issue 20 >Page 204206-1 > Article

Acta Physica Sinica
Vol. 68, Issue 20, 204206-1 (2019)

Progress of radiation effects of silicon photonics devices

Yue Zhou^1、2, Zhi-Yuan Hu^1、2, Da-Wei Bi^1、2, and Ai-Min Wu^1、2、*

Author Affiliations

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.7498/aps.68.20190543 Cite this Article

Yue Zhou, Zhi-Yuan Hu, Da-Wei Bi, Ai-Min Wu. Progress of radiation effects of silicon photonics devices[J]. Acta Physica Sinica, 2019, 68(20): 204206-1 Copy Citation Text

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Fig. 1. Relationships between photon energy, atomic number and three effects.光子能量和原子序数与三种效应的关系

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Fig. 2. Information transmission process of silicon optical system.硅光系统的信息传输过程

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Fig. 3. Schematic diagram of micro ring resonator.微环谐振器的结构示意图

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Fig. 4. Dependences of effective index changes on cumulative gamma radiation dose in (a) a-Si reso nators and (b) SiN_x devices, inferred from optical resonator measurements^[25]. 有效折射率与γ射线的累积剂量的关系　(a) a-Si谐振器; (b) SiN_x谐振器^[25]

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Fig. 5. Schematic diagram of MZM^[47]. MZM的示意图^[47]

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Yue Zhou, Zhi-Yuan Hu, Da-Wei Bi, Ai-Min Wu. Progress of radiation effects of silicon photonics devices[J]. Acta Physica Sinica, 2019, 68(20): 204206-1

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