• Acta Optica Sinica
  • Vol. 24, Issue 9, 1164 (2004)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Green-Light Optical Storage Properties of Spin-Coated Thin Film of AgTCNQ Derivative[J]. Acta Optica Sinica, 2004, 24(9): 1164 Copy Citation Text show less
    References

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    [4] Robert C, Spotember R. Organometallic materials for erasable optical storage. Appl. Opt., 1989, 28(7): 1417~1421

    [5] Gong Jianping. Optical and electronic properties of Ag-and Cu-TCNQ in polymer matrix. Surf. Interface Anal., 1994, 22(1~12): 511~14

    [6] Duan Hailing, Cowan D O, Poehler T O. Studies on the chemical modifications of metallo-organic charge-transfer complex switching and memory storage materials. Mat. Res. Symp. Proc., 1992, 247: 557~562

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    [11] Shoji Hiroma. Polarized absorption spectra of the TCNQ crystal bull. Chem. Soc. Jpn. Lett., 1970, 43: 3626~3627

    [12] Jonkman H Y, Kommandeur J. The UV spectra and their calculation of TCNQ and its MONA-and di-valent anion. Chem. Phys. Lett., 1972, 15:496~499

    [13] Boyd R H, Phillips W D. Solution dimerization of the tetracyanoquinodimethane ion radical. J. Chem. Phys., 1965, 43: 2927

    [14] Liu Shenggao, Liu Yunqi, Zhu Daoben. Amorphous semiconducting film containing nanometer particles of CuTCNQ: preparation, characterization and electrical switching property. Thin Solid Films, 1996, 280: 271~277

    [15] Kamitsos EI, Risen W M. Raman studies in CuTCNQ: resonance Raman spectral observations and calculations for TCNQ ion radicals. J. Chem. Phys., 1983, 79(12): 5808~5819

    [17] Gu Zhongze, Wu Haiming. Mechanism generating switching effects in Cu-TCNQ and Ag-TCNQ films. J. Phys. Chem., 1993, 97: 2543~2545

    [18] Hosino H, Matsushita S, Samura H et al.. Reversible write-erase properties of Cu-TCNQ optical recording media. Appl. Phys., 1986, 25: L341

    [19] Benson R C, Hoffman R C, Potember R S et al.. Spectral dependence of reversible optically induces transitions in organometallic compounds. Appl. Phys. Lett., 1983, 42(10): 855~857

    [20] Wan Xinggong, Li Jin, Dian Yong et al.. The power effect in write-in process of Ag-TCNQ electric recordding thin film. Phys. Stat. Sol., 2000, (181): R13~R15

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Green-Light Optical Storage Properties of Spin-Coated Thin Film of AgTCNQ Derivative[J]. Acta Optica Sinica, 2004, 24(9): 1164
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