[1] Y Lin, J W Connell. Advances in 2D boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene. Nanoscale, 4, 6908-6939(2012).

[2] N Shi, L Li, P Gao et al. Synthesis of two-dimensional hexagonal boron nitride and mid-infrared nanophotonics. ACS Applied Electronic Materials, 5, 34-65(2022).

[3] S Roy, X Zhang, A B Puthirath et al. Structure, properties and applications of two‐dimensional hexagonal boron nitride. Advanced Materials, 33, 2101589(2021).

[4] M Rafiq, X Hu, Z Ye et al. Recent advances in structural engineering of 2D hexagonal boron nitride electrocatalysts. Nano Energy, 91, 106661(2022).

[5] M Topsakal, E Aktürk, S Ciraci. First-principles study of two-and one-dimensional honeycomb structures of boron nitride. Physical Review B, 79, 115442(2009).

[6] C Chen, X Chen, B Deng et al. Probing interlayer interaction via chiral phonons in layered honeycomb materials. Physical Review B, 103, 035405(2021).

[7] J Cao, T L Meng, X Zhang et al. On functional boron nitride: electronic structures and thermal properties. Materials Today Electronics, 2, 100005(2022).

[8] A E Naclerio, P R Kidambi. A review of scalable hexagonal boron nitride (h‐BN) synthesis for present and future Applications. Advanced Materials, 35, 2207374(2023).

[9] S Hong, C S Lee, M H Lee et al. Ultralow-dielectric-constant amorphous boron nitride. Nature, 582, 511-514(2020).

[10] A Pierret, D Mele, H Graef et al. Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride. Materials Research Express, 9, 065901(2022).

[11] O Bilaç, C Duran. Al2O3/glass/h-BN composites with high thermal conductivity and low dielectric constant for low temperature cofired ceramic applications. Journal of Asian Ceramic Societies, 9, 283-290(2021).

[12] S Moon, J Kim, J Park et al. Hexagonal boron nitride for next‐generation photonics and electronics. Advanced Materials, 35, 2204161(2023).

[13] M J Molaei, M Younas, M Rezakazemi. A comprehensive review on recent advances in two-dimensional (2D) hexagonal boron nitride. ACS Applied Electronic Materials, 3, 5165-5187(2021).

[14] A Kumar, T Low, K H Fung et al. Tunable light-matter interaction and the role of hyperbolicity in graphene-hBN system. Nano Letters, 15, 3172-3180(2015).

[15] H Karimkhani, H Vahed. A broadband optical modulator based on rib-type silicon waveguide including graphene and h-BN layers. Optik, 254, 168633(2022).

[16] X Luo, Z Cheng, Z Liu et al. Dual-band perfect absorber based on a graphene/hexagonal boron nitride van der Waals hybrid structure. Journal of Physics D: Applied Physics, 54, 375303(2021).

[17] J Li, A Maity, S J Grenadier et al. Charge collection in h-BN neutron detectors at elevated temperatures. Applied Physics Letters, 118, 092102(2021).

[18] T Xu, H Wang, X Chen et al. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires. Nanotechnology, 31, 294004(2020).

[19] Y Hattori, T Taniguchi, K Watanabe et al. Determination of carrier polarity in Fowler-Nordheim tunneling and evidence of fermi level pinning at the hexagonal boron nitride/metal interface. ACS Applied Materials & Interfaces, 10, 11732-11738(2018).

[20] J Wang, F Ma, W Liang et al. Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures. Materials Today Physics, 2, 6-34(2017).

[21] Y R Kim, T L Phan, Y S Shin et al. Unveiling the hot carrier distribution in vertical graphene/h-BN/Au van der Waals heterostructures for high-performance photodetector. ACS Applied Materials & Interfaces, 12, 10772-10780(2020).

[22] G H Lee, Y J Yu, C Lee et al. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Applied Physics Letters, 99, 243114(2011).

[23] C W Jang, D H Shin, S H Choi. Bifunctional enhancement of photodetection and photovoltaic parameters in graphene/porous-Si heterostructures by employing interfacial hexagonal boron nitride and bathocuproine back-surface passivation layers. Journal of Materials Chemistry C, 10, 15913-15919(2022).

[24] F Gao, H Chen, W Feng et al. High‐performance van der Waals metal‐insulator‐semiconductor photodetector optimized with valence band matching. Advanced Functional Materials, 31, 2104359(2021).

[25] S Veeralingam, L Durai, P Yadav et al. Record-high responsivity and detectivity of a flexible deep-ultraviolet photodetector based on solid state-assisted synthesized hBN nanosheets. ACS Applied Electronic Materials, 3, 1162-1169(2021).

[26] Tian-Tian CHENG, Kun ZHANG, Man LUO et al. Research progress on first-principles calculations of interfacial charge transfer characteristics in InAs-based van der Waals heterojunctions. Journal of Infrared and Millimeter Waves.

[27] H Jeong, S Bang, H M Oh et al. Semiconductor-insulator-semiconductor diode consisting of monolayer MoS2, h-BN, and GaN heterostructure. Acs Nano, 9, 10032-10038(2015).

[28] Y R Kim, T L Phan, Y S Shin et al. Unveiling the hot carrier distribution in vertical graphene/h-BN/Au van der Waals heterostructures for high-performance photodetector. ACS Applied Materials & Interfaces, 12, 10772-10780(2020).

[29] Q A Vu, J H Lee, V L Nguyen et al. Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity. Nano Letters, 17, 453-459(2017).

[30] S K Hong, J E Kim, S O Kim et al. Flexible resistive switching memory device based on graphene oxide. IEEE Electron Device Letters, 31, 1005-1007(2010).

[31] J Y Cheon, J H Kim, J H Kim et al. Intrinsic relationship between enhanced oxygen reduction reaction activity and nanoscale work function of doped carbons. Journal of the American Chemical Society, 136, 8875-8878(2014).

[32] Z Cui, Y He, H Tian et al. Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal-insulator-metal devices. ACS Applied Electronic Materials, 2, 747-755(2020).

[33] Y Cai, G Zhang, Y W Zhang. Layer-dependent band alignment and work function of few-layer phosphorene. Scientific Reports, 4, 6677(2014).

[34] Y Cai, Y Liu, Y Xie et al. Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering. APL Materials, 8, 021107(2020).

[35] S K Jang, J Youn, Y J Song et al. Synthesis and characterization of hexagonal boron nitride as a gate dielectric. Scientific Reports, 6, 30449(2016).

[36] T Zhang, Y Wang, Y Zhang et al. Comprehensive annealing effects on AlGaN/GaN schottky barrier diodes with different work-function metals. IEEE Transactions on Electron Devices, 68, 2661-2666(2021).

[37] S Raaen. Adsorption of carbon dioxide on mono-layer thick oxidized samarium films on ni (100). Nanomaterials, 11, 2064(2021).