[6] GORELICK J L, LADBURRY R, KANCHAWA L, et al. The effects of neutron irradiation on gamma sensitivity of linear integrated circuit ［J］. IEEE Transactions on Nuclear Science, 2004, 51(6): 3679-3685.
[9] JUN I, XAPSOS M A, MESSENGER S R, et al. Proton nonionizing energy loss (NIEL) for device applications ［J］. IEEE Transactions on Nuclear Science, 2003, 50(6): 1924-1928.
[12] LI X J, GENG H B, LAN M J, et al. Radiation effects on silicon bipolar transistors caused by 3-10 MeV protons and 20-60 MeV bromine ions ［J］. Physica B-Condensed Matter, 2010, 405(6): 1489-1494.
[13] BARNABY H J, SMITH S K, SCHRIMPF R D, et al. Analytical model for proton radiation effects in bipolar devices ［J］. IEEE Transactions on Nuclear Science, 2002, 49(6): 2643-2649.
