Researching | Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Journals >Photonics Research >Volume 7 >Issue 6 >Page B24 > Article

Photonics Research
Vol. 7, Issue 6, B24 (2019)

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong^1、*, Brianna A. Klein¹, Andrew A. Allerman¹, Albert G. Baca¹, Mary H. Crawford¹, Jacob Podkaminer^1、2, Carlos R. Perez¹, Michael P. Siegal¹, Erica A. Douglas¹, Vincent M. Abate¹, and Francois Leonard³

Author Affiliations

¹Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

²Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³Sandia National Laboratories, Livermore, California 94550, USA

show less

DOI: 10.1364/PRJ.7.000B24 Cite this Article Set citation alerts

Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate[J]. Photonics Research, 2019, 7(6): B24 Copy Citation Text

show less

References

[1] G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, P. Sandvik. Deep UV photon-counting detectors and applications. Proc. SPIE, 7320, 732001(2009).

[2] E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, R. P. Mirin. Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector. IEEE J. Sel. Top. Quantum Electron., 13, 967-977(2007).

[3] M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, D. Rosenberg. Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency. Appl. Phys. Lett., 89, 253505(2006).

[4] M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, R. P. Mirin. Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection. J. Vac. Sci. Technol. B, 26, 1174-1177(2008).

[5] A. J. Shields, M. P. O’sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, M. Pepper. Detection of single photons using a field-effect transistor gated by a layer of quantum dots. Appl. Phys. Lett., 76, 3673-3675(2000).

[6] G. Snider. 1D Poisson.

[7] Y. D. Wang, K. Y. Zang, S. J. Chua. Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures. J. Appl. Phys., 100, 054306(2006).

[8] C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, M. P. Siegal. Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts. J. Mater. Res., 30, 315-322(2015).

[9] S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, D. L. Medlin. Electrochemical deposition of Bi₂(Te,Se)₃ nanowire arrays on Si. J. Electrochem. Soc., 159, D235-D239(2012).

[10] B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, V. M. Abate. Planar ohmic contacts to Al_0.45Ga_0.55N/Al_0.3Ga_0.7N high electron mobility transistors. ECS J. Solid State Sci. Technol., 6, S3067-S3071(2017).

[11] A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, R. J. Kaplar. Al_0.85Ga_0.15N/Al_0.70Ga_0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature. ECS J. Solid State Sci. Technol., 6, Q161-Q165(2017).

[12] A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, T. R. Fortune. High temperature operation of Al_0.45Ga_0.55N/Al_0.30Ga_0.70N high electron mobility transistors. ECS J. Solid State Sci. Technol., 6, S3010-S3013(2017).

[13] A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, C. A. Sanchez. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors. J. Appl. Phys., 123, 114502(2018).

[14] M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, I. Akasaki. High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate. Phys. Status Solidi C, 6, S972-S975(2009).

[15] M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors. Jpn. J. Appl. Phys., 52, 08JF02(2013).

[16] P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, S. Nikzad. Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates. J. Electron. Mater., 42, 854-858(2013).

[17] K. Bergemann, F. Léonard. Room-temperature phototransistor with negative photoresponsivity of 10⁸ A W⁻¹ using fullerene-sensitized aligned carbon nanotubes. Small, 14, 1802806(2018).

[18] A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors. Jpn. J. Appl. Phys., 55, 05FJ04(2016).

[19] Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals. Jpn. J. Appl. Phys., 55, 05FJ07(2016).

[20] S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, A. Khan. Selective area deposited n-Al_0.5Ga_0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity. Appl. Phys. Lett., 110, 171104(2017).

[21] A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. High-performance solar-blind Al_0.6Ga_0.4N/Al_0.5Ga_0.5N MSM type photodetector. Appl. Phys. Lett., 111, 191103(2017).

[22] Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, Z. H. Li. High-gain AlGaN solar-blind avalanche photodiodes. IEEE Electron Device Lett., 35, 372-374(2014).

CLP Journals

[1] Xiaohang Li, Russell D. Dupuis, Tim Wernicke. Semiconductor UV photonics: feature introduction[J]. Photonics Research, 2019, 7(12): SUVP1

[2] Long Guo, Ke Jiang, Xiaojuan Sun, Zihui Zhang, Jianwei Ben, Yuping Jia, Yong Wang, Dabing Li. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode[J]. Photonics Research, 2021, 9(10): 1907

Figures&Tables (11)

References (22)

Copy Citation Text

Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate[J]. Photonics Research, 2019, 7(6): B24

Download Citation

Set citation alerts for the article

Set citation alerts for the article

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address