Researching | Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Journals >Photonics Research >Volume 7 >Issue 6 >Page B24 > Article

Photonics Research
Vol. 7, Issue 6, B24 (2019)

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong^1,*, Brianna A. Klein¹, Andrew A. Allerman¹, Albert G. Baca¹..., Mary H. Crawford¹, Jacob Podkaminer^1,2, Carlos R. Perez¹, Michael P. Siegal¹, Erica A. Douglas¹, Vincent M. Abate¹ and Francois Leonard³|Show fewer author(s)

Author Affiliations

¹Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

²Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³Sandia National Laboratories, Livermore, California 94550, USA

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DOI: 10.1364/PRJ.7.000B24 Cite this Article Set citation alerts

Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard, "Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate," Photonics Res. 7, B24 (2019) Copy Citation Text

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References

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[10] B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, V. M. Abate. Planar ohmic contacts to Al_0.45Ga_0.55N/Al_0.3Ga_0.7N high electron mobility transistors. ECS J. Solid State Sci. Technol., 6, S3067-S3071(2017).

[11] A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, R. J. Kaplar. Al_0.85Ga_0.15N/Al_0.70Ga_0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature. ECS J. Solid State Sci. Technol., 6, Q161-Q165(2017).

[12] A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, T. R. Fortune. High temperature operation of Al_0.45Ga_0.55N/Al_0.30Ga_0.70N high electron mobility transistors. ECS J. Solid State Sci. Technol., 6, S3010-S3013(2017).

[13] A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, C. A. Sanchez. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors. J. Appl. Phys., 123, 114502(2018).

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[16] P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, S. Nikzad. Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates. J. Electron. Mater., 42, 854-858(2013).

[17] K. Bergemann, F. Léonard. Room-temperature phototransistor with negative photoresponsivity of 10⁸ A W⁻¹ using fullerene-sensitized aligned carbon nanotubes. Small, 14, 1802806(2018).

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[20] S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, A. Khan. Selective area deposited n-Al_0.5Ga_0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity. Appl. Phys. Lett., 110, 171104(2017).

[21] A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. High-performance solar-blind Al_0.6Ga_0.4N/Al_0.5Ga_0.5N MSM type photodetector. Appl. Phys. Lett., 111, 191103(2017).

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CLP Journals

[1] Xiaohang Li, Russell D. Dupuis, Tim Wernicke, "Semiconductor UV photonics: feature introduction," Photonics Res. 7, SUVP1 (2019)

[2] Long Guo, Ke Jiang, Xiaojuan Sun, Zihui Zhang, Jianwei Ben, Yuping Jia, Yong Wang, Dabing Li, "Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode," Photonics Res. 9, 1907 (2021)

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Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard, "Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate," Photonics Res. 7, B24 (2019)

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