Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong; Brianna A. Klein; Andrew A. Allerman; Albert G. Baca; Mary H. Crawford; Jacob Podkaminer; Carlos R. Perez; Michael P. Siegal; Erica A. Douglas; Vincent M. Abate; Francois Leonard

doi:10.1364/PRJ.7.000B24

Journals >Photonics Research >Volume 7 >Issue 6 >Page B24 > Article

Photonics Research
Vol. 7, Issue 6, B24 (2019)

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong^1、*, Brianna A. Klein¹, Andrew A. Allerman¹, Albert G. Baca¹, Mary H. Crawford¹, Jacob Podkaminer^1、2, Carlos R. Perez¹, Michael P. Siegal¹, Erica A. Douglas¹, Vincent M. Abate¹, and Francois Leonard³

Author Affiliations

¹Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

²Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³Sandia National Laboratories, Livermore, California 94550, USA

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DOI: 10.1364/PRJ.7.000B24 Cite this Article Set citation alerts

Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate[J]. Photonics Research, 2019, 7(6): B24 Copy Citation Text

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