Fabrication of quantum dots (QD) by pulsed laser on SiGe alloy samples is reported. After annealing,some peaks of stimulated emission were observed in the region of 720-800 nm which have threshold behavior obviously. It was found that the peaks of stimulated emission have an obvious red-shift from Si QD to SiGe QD. Oxide layer on SiGe quantum dots involves Si＝O bonds and Ge＝O bonds according to the Fourier transform infrared spectroscopy (FTIR),which could produce the localized gap states of electrons (or even the trapped exciton). Calculation shows that Ge＝O bonds emerging on SiGe QD could decrease the distance between the valence band and the localized gap states which can interpret the red-shift of stimulated emission on SiGe QD.