• Journal of Infrared and Millimeter Waves
  • Vol. 21, Issue 1, 67 (2002)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. MOLECULAR BEAM EPITAXIAL GROWTH OF 3-in HgCdTe WAFER[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 67 Copy Citation Text show less
    References

    [2] Ferret P, Zanatt J P, Hamelin R, et al. Status of the MBE technology at Leti LIR fir the manufacturing of HgCdTe focal plane arrays. J. ELECTRONIC Matterials, 2000,29: 641

    [3] de Lyon T J, Jensen J E, Gorwitz M D, et al. MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: a review of recent progress. J. Electronic Materials, 1999, 28: 705

    [4] Brill G, Velicu S, Boieriu P, et al. MBE growth and device processing of MWIR HgCdTe on large area Si substrates. J. ELECTRONIC Materials, 2001, 30: 717

    [5] Varesi J B, Bornfreund R E, Childs A C, et al. Fabrication of High-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates. J. Crystal Growth, 2001,30:566

    [6] Ziegler J, Finck M, Kruger R, et al. Long linear HgCdTe arrays with superior temperature-cycling-reliability. SPIE, 2000,4028:380

    [7] He L, Yang J R, Wang S L, et al. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe.J. Crystal Growth, 1997,175/176:677

    [8] He L, Wu Y, Chen L, et al. Composition control and surface defects of MBE-grown HgCdTe. J. Crystal Growth, 2001,227/228: 677

    [9] Bajaj J, Arias J M, Zandian M, et al. Uniform low defect density molecular beam epitaxial HgCdTe. J. Electron Materilas, 1996,25:1394

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. MOLECULAR BEAM EPITAXIAL GROWTH OF 3-in HgCdTe WAFER[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 67
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