The recent results on molecular beam epitaxial growth of 3-in HgCdTe wafers were reported. The composition uniformity in the wafer was found to be 1.2% in a diameter of 70 mm, corresponding to a deviation in cutoff wavelength of 0.1 μm at 80 K. By refining the growth conditions, the surface morphology was significantly improved. The defect density was reduced to below 300cm -2, and the defect size was suppressed to be smaller than 10μm. The material quality can meet the requirements of FPA fabrications.