Back thinning is an important process for the fabrication of InP-based optoelectronic chips. When the wafer loses the structural support after thinning, its warping degree will increase due to the severe deformation caused by stress. Serious warping will reduce the chip reliability or even make it invalid, thus the warpage of the wafer should be controlled and corrected. In this paper, based on the theory of ‘damage layer-warping degree’, the influences of wafer thickness, adhesive mode, grinding pressure, grinding speed and abrasive particle size on warping degree were analyzed. And the process parameters were optimized according to the test results, and the warping degree of the wafer was reduced by about 20% after optimization. Then wet corrosion was used to remove the damaged layer and correct the warping, which reduced the warping degree of the wafer by about 90%. Using the optimized thinning process to reduce the damage stress and wet-corrosion to remove the damage layer are the applicable methods for controlling and correcting the warping degree of the wafer, which can reduce the warping degree to be less than 10% of that before the back-thinning process.