fT/fmax＞150/210 GHz AlGaN/GaN HFETs with regrown n+-GaN Ohmic contacts by MOCVD

LV Yuan-Jie; FENG Zhi-Hong; SONG Xu-Bo; ZHANG Zhi-Rong; TAN Xin; GUO Hong-Yu; FANG Yu-Long; ZHOU Xing-Ye; CAI Shu-Jun

doi:10.11972/j.issn.1001-9014.2016.05.005

[1] Shen L, Palacios T, Poblenz C, et al. Unpassivated High Power Deeply Recessed GaN HEMTs With Fluorine-Plasma Surface Treatment[J]. IEEE Electron Device Letters, 2006, 27: 214-216.

[2] Micovic M, Kurdoghlian A, Shinohara K, et al. W-band GaN MMIC with 842 mW output power at 88 GHz. IEEE IMS, 2010, Anaheim, CA:237-239.

[3] Kuzmík J. Power electronics on InAlN/(In)GaN: Prospect for a record performance[J]. IEEE Electron Device Letters, 2001, 22: 510-512.

[4] Sun H, Alt A R, Benedickter H, et al. 205-GHz (Al,In)N/GaN HEMTs[J]. IEEE Electron Device Letters, 2010, 31:293-295.

[5] Brown A, Brown K, Chen J, et al. W-band GaN power amplifier MMICs[C]. IEEE MTT-S International, 2011, Baltimore, MD:1-4.

[6] Palacios T, Dora Y, Chakraborty A, et al. Optimization of AlGaN/GaN HEMTs for high frequency operation[J]. phys. stat. sol. (a), 2006, 203: 1845-1850.

[7] Higashiwaki M, Mimura T ， Matsui T. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz[J]. Applied Physics Express, 2008, 1: 021103-(1-3).

[8] Chung J W, Hoke W E, Chumbes E M, et al. Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs[C]. IEDM Tech. Dig, 2010, 30:1-4.

[9] Chung J W, Hoke W E, Chumbes E M, et al. AlGaNGaN HEMT with 300-GHz fmax[J]. IEEE Electron Device Letters, 2010, 31: 195-197.

[10] Guo H Y, Lv Y J, Gu G D, et al. High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition[J]. Chin. Physics Letter, 2015, 32: 118501-(1-3).

[11] Chen G, Kumar V, Schwindt R S, et al. Low Gate Bias Model Extraction Technique for AlGaN/GaN HEMTs[J]. IEEE Trans Micro Theory Tech, 2006, 54: 2949-2953.

[12] Higashiwaki M, Matsui T. AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates[J]. Japanese Journal of Applied Physics. 2005, 44: 475-478.

[13] Higashiwaki M, Mimura T，Matsui T. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz[J]. Japanese Journal of Applied Physics, 2006, 45: 1111-1113.

[14] Palacios T, Chakraborty A, Heikman S, et al. AlGaN/GaN high electron mobility transistors with InGaN back-barriers[J]. IEEE Electron Device Letters, 2006, 27: 13-15.

[15] Brown D F, A Williams, Shinohara K, et al. W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE[C]. IEEE Electron Devices Meeting (IEDM), 2011, Washington, DC: 461-464.

[16] Kim D, Kumar V, Lee J, et al. Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Dielectric Layer[J]. IEEE Electron Device Letters, 2009, 30: 913-915.

[17] Bouzid-Driad S, Maher H, Defrance N, et al. AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz[J]. IEEE Electron Device Letters, 2013, 34:36-38.