A 1550 nm monolithically integrated resonant cavity-enhanced (RCE) semiconductor photodetector with four-mirror and three-cavity (M4C3) is reported. The contradiction among high quantum efficiency, high response speed and narrow spectral response linewidth is overcome by multi-cavities structure. High-quality GaAs/InP heteroepitaxy is realized by employing a low-temperature buffer layer. By adopting M4C3 structure, high quantum efficiency, high response speed, and narrow spectral response linewidth can be obtained simultaneously. Peak quantum efficiency of about 70%, spectral linewidth of 0.5 nm and 3 dB bandwidth of 8.0 GHz have been obtained in this device.