• Chinese Journal of Lasers
  • Vol. 48, Issue 16, 1601001 (2021)
Zhonghui Yao1,2, Hongmei Chen2,3,4, Tuo Wang2,5, Cheng Jiang1,2, and Ziyang Zhang1,2,*
Author Affiliations
  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
  • 3Qingdao Yichen Leishuo Technology Co., Ltd., Qingdao, Shandong 266000, China
  • 4Nanchang Research Institute, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi 330200, China
  • 5State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    DOI: 10.3788/CJL202148.1601001 Cite this Article Set citation alerts
    Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001 Copy Citation Text show less
    References

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    Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001
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