P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Zhonghui Yao; Hongmei Chen; Tuo Wang; Cheng Jiang; Ziyang Zhang

doi:10.3788/CJL202148.1601001

Journals >Chinese Journal of Lasers >Volume 48 >Issue 16 >Page 1601001 > Article

Chinese Journal of Lasers
Vol. 48, Issue 16, 1601001 (2021)

P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Zhonghui Yao^1,2, Hongmei Chen^2,3,4, Tuo Wang^2,5, Cheng Jiang^1,2, and Ziyang Zhang^1,2,*

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

³Qingdao Yichen Leishuo Technology Co., Ltd., Qingdao, Shandong 266000, China

⁴Nanchang Research Institute, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi 330200, China

⁵State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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DOI: 10.3788/CJL202148.1601001 Cite this Article Set citation alerts

Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001 Copy Citation Text

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Article index updated: Jul. 28, 2025

The article is cited by 4 article(s) CLP online library. (Some content might be in Chinese.)

Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001

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