An IGBT with Partial High Permittivity Dielectric Modulation

CHEN Weizhen; CHENG Junji

doi:10.13911/j.cnki.1004-3365.200310

[1] LASKA T, MUNZER M, PFIRSCH F, et al. The field stop IGBT (FS-IGBT)：a new power device concept with a great improvement potential ［C］ ∥ Proceed ISPSD. Toulouse, France. 2000: 355-358.

[2] ANTONIOU M, UDREA F, BAUER F. The superjunction insulated gate bipolar transistor optimization and modeling ［J］. IEEE Trans Elec Dev, 2010, 57(3): 594-600.

[3] CHEN W Z, CHENG J J, CHEN X B. A novel IGBT with high-k dielectric modulation achieving ultralow turn-off loss ［J］. IEEE Trans Elec Dev, 2020, 67(3): 1066-1070.

[4] OH K H, KIM J, SEO H. Experimental investigation of 650 V superjunction IGBTs ［C］ ∥ Proceed ISPSD. Prague, Czech Republic. 2016: 299-302.

[5] IWAMOTO S, TAKAHASHI K, LURIBAYASHI H, et al. Above 500 V class superjunction MOSFETs fabricated by deep trench etching and epitaxial growth ［C］ ∥ Proceed ISPSD. Santa Barbara, CA, USA. 2005: 31-34.

[6] WANG H, NAPOLI E, UDREA F. Breakdown voltage for superjunction power devices with charge imbalance: an analytical model valid for both punch through and non punch through devices ［J］. IEEE Trans Elec Dev, 2009, 56(12): 3175-3183.

[7] CHENG J J, CHEN W Z, LIN J J. Potential of utilizing high-k film to improve the cost performance of trench LDMOS ［J］. IEEE Trans Elec Dev, 2019, 66(7): 3049-3054.

[8] LIN J J, CHENG J J, LI P. Study on SrTiO3 film for the application of power devices ［J］. Superlattices and Microstructures, 2019, 130: 168-174.

[9] CHEN X B, HUANG M M. A vertical power MOSFET with an interdigitated drift region using high-k insulator ［J］. IEEE Trans Elec Dev, 2012, 59(9): 2430-2437.