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Journals >Acta Physica Sinica >Volume 69 >Issue 10 >Page 100502-1 > Article

Acta Physica Sinica
Vol. 69, Issue 10, 100502-1 (2020)

Nonequilibrium statistical theoretical analysis method of TDDB of gate oxide

Wen-Jing Zhao, Meng-Guang Ding, Xiao-Li Yang, and Hai-Yun Hu^*

Author Affiliations

School of Physics, Beijing Institute of Technology, Beijing 100081, China

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DOI: 10.7498/aps.69.20200108 Cite this Article

Wen-Jing Zhao, Meng-Guang Ding, Xiao-Li Yang, Hai-Yun Hu. Nonequilibrium statistical theoretical analysis method of TDDB of gate oxide[J]. Acta Physica Sinica, 2020, 69(10): 100502-1 Copy Citation Text

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References

[1] Jane W T, Zhao Y, Zhang R Z[J]. Semicond. Technol., 35, 154(2010).

[2] Stathis J H, Linder B P, Rodriguez R, Lombardo S[J]. Microelectron. Reliab., 43, 1353(2003).

[3] Wang Y G, Xu M Z, Tan C H, Duan C H[J]. Acta Phys. Sin., 54, 3884(2005).

[4] Hu H S, Zhang M, Lin L J[J]. Acta Electron. Sin., 28, 80(2000).

[5] Harari E[J]. J. Appl. Phys., 49, 2478(1978).

[6] Chen I C, Holland S E, Hu C M[J]. IEEE Trans. Electron Devices, 32, 413(1985).

[7] Ricco B, Azbel M Y, Brodsky M H[J]. Phys. Rev. Lett., 51, 1795(1983).

[8] Apte P P, Saraswat K C[J]. IEEE Trans. Electron Devices, 41, 1595(1994).

[9] Ma Z F, Zhuang Y Q, Du L, Bao J L, Li W H[J]. Acta Phys. Sin., 52, 2046(2003).

[10] Lee J C, Chen I C, Hu C M[J]. IEEE Trans. Electron Devices, 35, 2268(1988).

[11] Suñé J, Placencia I, Barnio N, Farrés E, Martin F, Aymerich X[J]. Thin Solid Films, 185, 347(1990).

[12] Nissan-Cohen Y, Shappir J, Frohman-Bentchkowsky D[J]. J. Appl. Phys., 58, 2252(1985).

[13] Yao F Y, Hu H S, Zhang M[J]. Acta Electron. Sin., 29, 1522(2001).

[14] Suñé J, Placencia I, Barniol N, Farrés E, Aymerich X[J]. Phys. Status Solidi A, 111, 675(1989).

[15] Lin L J, Zhang M[J]. Acta Elect. Sin., 28, 59(2000).

[16] Dumin D J, Maddux J R, Scott R S, Subramoniam R[J]. IEEE Trans. Electron Devices, 41, 1570(1994).

[17] Zhou Q P[J]. MS. Thesis(2018).

[18] Xing X S[J]. Mater. Sci. Prog, 5, 22(1991).

[19] Yang X L, Wang B R, Hu H Y[J]. Acta Phys. Sin., 67, 180501(2018).

[20] Kottalam J, Lindenberg K, West B J[J]. J. Stat. Phys., 42, 979(1986).

[21] Olivo P, Ricco B, Nguyen T N, Kuan T S, Jeng S J[J]. Appl. Phys. Lett., 51, 2245(1987).

[22] Chen C F, Wu C Y, Lee M K, Chen C N[J]. IEEE Trans. Electron Devices, 34, 1540(1987).

[23] Liu H X, Hao Y[J]. Chin. J. Semicond., 23, 952(2002).

[24] Piyas S[J]. J. Semicond., 38, 50(2017).

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Wen-Jing Zhao, Meng-Guang Ding, Xiao-Li Yang, Hai-Yun Hu. Nonequilibrium statistical theoretical analysis method of TDDB of gate oxide[J]. Acta Physica Sinica, 2020, 69(10): 100502-1

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