Hong-sheng SUN, Xin-gang LIANG, Wei-gang MA, Yu-feng ZHANG, Chao QIU, Yue-gang MA. Method and Device for Measuring High-Temperature Spectral Emissivity of Non-Conductive Materials Based on Laser Rotation Heating[J]. Spectroscopy and Spectral Analysis, 2022, 42(1): 310
- Spectroscopy and Spectral Analysis
- Vol. 42, Issue 1, 310 (2022)
Fig. 1. Schematic diagram of measurement based on laser rotation heating
Fig. 2. Design scheme of high temperature spectral emissivity measurement device
Fig. 3. Design drawing of sample spectral radiation and temperature field microscopic imaging measurement system
Fig. 4. Temperature field distribution diagram of the silicon carbide sample after entering the steady state
Fig. 5. Spectral emissivity measurement error introduced by sample unequal temperature
Fig. 6. Diagram of high-temperature spectral emissivity measurement device based on laser heating
Fig. 7. Measurement results of silicon carbide high temperature normal spectral emissivity
(a): Normal spectral emissivity of typical spectral points (1 000 K); (b): Normal spectral emissivity of typical temperature points (4 μm)
(a): Normal spectral emissivity of typical spectral points (1 000 K); (b): Normal spectral emissivity of typical temperature points (4 μm)
Fig. 8. Comparison of measurement results of silicon carbide normal spectral emissivity (1 000 K)
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Table 1. Temperature distribution table of the silicon carbide sample relevant area measurement
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Table 2. Temperature distribution table of the mullite ceramics sample relevant area measurement
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