• Microelectronics
  • Vol. 51, Issue 6, 804 (2021)
GAO Mingming, WANG Shuting, NAN Jingchang, and XU Gaoyang
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210027 Cite this Article
    GAO Mingming, WANG Shuting, NAN Jingchang, XU Gaoyang. Simulation Design of a Dual-Band Reconfigurable Power Amplifier[J]. Microelectronics, 2021, 51(6): 804 Copy Citation Text show less
    References

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    [17] KALYAN R, RAWAT K, KOUL S K. Reconfigurable and concurrent dual-band Doherty power amplifier for multiband and multistandard applications [J]. IEEE Trans Microwave Theo & Tech, 2017, 65(1): 198-208.

    [18] TAGHAVI H, AKBARPOUR M, REZAEI S, et al. Broadband high efficiency GaN RF power amplifier for multi-band applications [C] // Proceed Mediter Microwave Symp. Marrakech, Morocco. 2014: 1-4.

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    [20] GILASGAR M, BARLAB A, PRADELL L. High-efficiency reconfigurable dual-band class-F power amplifier with harmonic control network using MEMS [J]. IEEE Microwave Wirel Compon Lett, 2020,30(7): 677-680.

    GAO Mingming, WANG Shuting, NAN Jingchang, XU Gaoyang. Simulation Design of a Dual-Band Reconfigurable Power Amplifier[J]. Microelectronics, 2021, 51(6): 804
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