• Infrared and Laser Engineering
  • Vol. 33, Issue 3, 256 (2004)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Analysis about the invalidation and improvement research of semiconductor saturable absorption mirror[J]. Infrared and Laser Engineering, 2004, 33(3): 256 Copy Citation Text show less


    The modelocking principle and the manufacture method of semiconductor saturable absorption mirror are introduced. By analyzing the behavior that ultrashort pulse acts on semiconductor material, some methods to increase the anti-damage threshold are put forward, such as doping in absorption layer, annealing, widening the area grown at low temperature, surface heat sink and so on. In experiment, several semiconductor saturable absorption mirrors could work and obtain stable passive modelocking pulse output after annealing and being coated with dielectric film.