• Infrared and Laser Engineering
  • Vol. 47, Issue 4, 420001 (2018)
Zi Hui, Xue Zhengqun, Wang Linghua, Lin Zhongxi, and Su Hui
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/irla201847.0420001 Cite this Article
    Zi Hui, Xue Zhengqun, Wang Linghua, Lin Zhongxi, Su Hui. Study of wide spectrum superluminescent diode at 1 550 nm[J]. Infrared and Laser Engineering, 2018, 47(4): 420001 Copy Citation Text show less
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    [8] Ma Dongge, Shi Jiawei, Liu Mingda, et al. Effect of oacet reflectivity on the output characteristics of superluminescent diode[J]. Laser Technology, 1996, 20(3): 168-173. (in Chinese)

    [10] Li Hui, Wang Yuxia, Li Mei, et al. High-power 850 nm large optical cavity wide spectrum superluminescent diode[J].Chinese J Lasers, 2006, 33(5): 613-616. (in Chinese)

    [11] Song J H, Kim K, Leem Y A, et al. 100 mW High-power broadband superluminescent diode using selective area growth at 1.5 μm wavelength[J]. IEEE Photonics Technology Letters, 2007, 19(19): 1415-1417.

    [12] Liu Yang, Song Junfeng, Zeng Yuping, et al. Wide-spectrum high-power 1.55 μm superluminescent light source with non-uniform well-thickness multi-quantum wells[J]. Chinese J Lasers, 2003, 30(2): 109-112. (in Chinese)

    [13] Zhong Ming, Qian Zhiyu, Xue Han, et al. Study of OCT resolution improvement with double SLD sources[J]. Shanghai Journal of Biomendical Engineering, 2006, 27(4): 226-228. (in Chinese)

    Zi Hui, Xue Zhengqun, Wang Linghua, Lin Zhongxi, Su Hui. Study of wide spectrum superluminescent diode at 1 550 nm[J]. Infrared and Laser Engineering, 2018, 47(4): 420001
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