Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung-Min Yu; Myungjin Shin; Min-Hyeong Kim; Lars Zimmermann; Woo-Young Choi

doi:10.3788/COL201715.071301

Journals >Chinese Optics Letters >Volume 15 >Issue 7 >Page 071301 > Article

Chinese Optics Letters
Vol. 15, Issue 7, 071301 (2017)

Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung-Min Yu¹, Myungjin Shin¹, Min-Hyeong Kim¹, Lars Zimmermann², and Woo-Young Choi^1、*

Author Affiliations

¹Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea

²Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder) 15236, Germany

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DOI: 10.3788/COL201715.071301 Cite this Article Set citation alerts

Byung-Min Yu, Myungjin Shin, Min-Hyeong Kim, Lars Zimmermann, Woo-Young Choi. Influence of dynamic power dissipation on Si MRM modulation characteristics[J]. Chinese Optics Letters, 2017, 15(7): 071301 Copy Citation Text

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Abstract

We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.