Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung-Min Yu; Myungjin Shin; Min-Hyeong Kim; Lars Zimmermann; Woo-Young Choi

doi:10.3788/COL201715.071301

Journals >Chinese Optics Letters >Volume 15 >Issue 7 >Page 071301 > Article

Chinese Optics Letters
Vol. 15, Issue 7, 071301 (2017)

Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung-Min Yu¹, Myungjin Shin¹, Min-Hyeong Kim¹, Lars Zimmermann², and Woo-Young Choi^1、*

Author Affiliations

¹Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea

²Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder) 15236, Germany

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DOI: 10.3788/COL201715.071301 Cite this Article Set citation alerts

Byung-Min Yu, Myungjin Shin, Min-Hyeong Kim, Lars Zimmermann, Woo-Young Choi. Influence of dynamic power dissipation on Si MRM modulation characteristics[J]. Chinese Optics Letters, 2017, 15(7): 071301 Copy Citation Text

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