• Journal of Infrared and Millimeter Waves
  • Vol. 20, Issue 2, 154 (2001)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, [in Chinese]3、4, and [in Chinese]4、5
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3School of Electrical &
  • 4Computer Engineering, The University of Oklahoma,Norman.OK 73019.USA
  • 5CannSchool of Electrical &
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOELECTRIC PROPERTIES OF PbSe/BaF2/CaF2 FILMS ON Si(111)[J]. Journal of Infrared and Millimeter Waves, 2001, 20(2): 154 Copy Citation Text show less
    References

    [1] Feit Z,McDonald M,Woods R J,et al.Low threshold PbEuSeTe/PbSe separate confinement buried heterostrucutre diode lasers.Appl.Phys.Lett.,1996,69(4): 2882

    [2] Shi Z,Tacke M,Lambrecht A,et al. Mid-infrared lead salt multi-quantum-well diode lasers with 282K operation. Appl.Phys.Lett.,1995,66(19): 2537

    [3] Zogg H, Blunier S,Fach A,et al. Thermal-mismatch-strain relaxation in epitaxial CaF2,BaF2/CaF2, and PbSe/BaF2/CaF2 layers on Si(111) after many temperature cycles. Phys. Rev.B,1994,50(15):10801

    [4] Wu H Z,Fang X M, Salas Jr R,et al. MBE growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface. J.Vac.Sci.Technol. B, 1999,17(3): 1263

    [5] Muller P, Zogg, H,Fach A,et al. Reduction of threading dislocation densities in heavily lattice-mismatched PbSe on Si(111) by glide. Phys.Rev .Lett.,1997,78(15):3007

    [6] McCann P J,Fang X M,Liu W K,et al. MBE growth of PbSe/CaF2/Si(111). J.Crst.Growth.,1997,175/176:1057

    [7] Zogg H,Maissen C,Masek J,et al. Photovoltaic infrared sensor arrays in monolithic lead chalcogenides on silicon. Semicond.Sci. Technol.,1991,6:C36

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOELECTRIC PROPERTIES OF PbSe/BaF2/CaF2 FILMS ON Si(111)[J]. Journal of Infrared and Millimeter Waves, 2001, 20(2): 154
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