• Infrared and Laser Engineering
  • Vol. 46, Issue 12, 1220001 (2017)
Shi Zhu, Dai Qian, Song Haizhi, Xie Heping, Qin Wenzhi, Deng Jie, Ke Zungui, and Kong Fanlin
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/irla201746.1220001 Cite this Article
    Shi Zhu, Dai Qian, Song Haizhi, Xie Heping, Qin Wenzhi, Deng Jie, Ke Zungui, Kong Fanlin. Low dark count rate InGaAsP/InP SPAD[J]. Infrared and Laser Engineering, 2017, 46(12): 1220001 Copy Citation Text show less
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    [2] Dutton N A W, Gyongy I, Parmesan L, et al. A SPAD-based QVGA image sensor for single-photon counting and quanta imaging[J]. IEEE Transactions on Electron Devices, 2016, 63(1): 189-196.

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    [4] Keith Forsyth, Noah Clay. Geiger-mode InGaAsP/InP APDs optimized for single photon counting at 1.06 μm[C]//SPIE, 2006, 6372: 63720L.

    [5] Mcintosh K A, Donnelly J P, Oakley D C, et al. InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm[J]. Applied Physics Letters, 2002, 81(14): 2505-2507.

    [6] Becker W W. Advanced Time-Correlated Single Photon Counting Techniques[M]. 3rd ed. Qu Junle, translated. Beijing: Science Press, 2009: 1-402. (in Chinese)

    [7] Donnelly J P, Duerr E K, Mcintosh K A, et al. Design considerations for 1.06-μm InGaAsP-InP Geiger-mode avalanche photodiodes[J]. IEEE Journal of Quantum Electronics, 2006, 42(8): 797-809.

    [8] Tsang W T. Semiconductor Photodetector[M]. Du Baoxun, translated. Beijing: Tsinghua University Press, 1992. (in Chinese)

    [9] Ji Yingjun, Shi Zhu, Qin Wenzhi, et al. Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting[J]. Infrared and Laser Engineering, 2015, 44(3): 934-940. (in Chinese)

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    Shi Zhu, Dai Qian, Song Haizhi, Xie Heping, Qin Wenzhi, Deng Jie, Ke Zungui, Kong Fanlin. Low dark count rate InGaAsP/InP SPAD[J]. Infrared and Laser Engineering, 2017, 46(12): 1220001
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