• Microelectronics
  • Vol. 52, Issue 4, 582 (2022)
WANG Zhongyan, HU Yongfei, and GAO Weiqi
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220106 Cite this Article
    WANG Zhongyan, HU Yongfei, GAO Weiqi. A Radiation Hardened Four Channel High Voltage 12-bit DAC[J]. Microelectronics, 2022, 52(4): 582 Copy Citation Text show less
    References

    [4] LI Y, ZENG T, CHEN D G. A high resolution and high ac-curacy R-2R DAC based on ordered element matching [C]// IEEE ISCAS. 2013: 1974-1977.

    [8] HUANG Y C, KER M D. A latchup-immune and robust SCR device for ESD protection in 0.25-μm 5-V CMOS process [J]. IEEE Elec Dev Lett, 2013, 34(5): 674-676.

    [9] CHUNG Y H,WU M H,LI H S. A 12-bit 8.47-fJ/ conversion-step capacitor-swapping SAR ADC in 110 nm CMOS [J]. IEEE Trans Circ & Syst I: Reg Pap, 2015, 62(1): 10-18.

    WANG Zhongyan, HU Yongfei, GAO Weiqi. A Radiation Hardened Four Channel High Voltage 12-bit DAC[J]. Microelectronics, 2022, 52(4): 582
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