[1] HU Jin,DU Lei,ZHUANG Yi-qi,et al.Noise as a representation for CTR of optoelectronic coupled devices[J].Chinese Journal Semiconductors,2007,28(4):597-603.
[2] BERINGER J,BORNER K,MOMMSEN R.K,et al.Radiation hardness and lifetime studies of LEDs and VCSELS for the optical readout of the ATLAS SCT[J].Nuclear Instruments and Methods in Physics Research A,1999,435:375-392.
[3] GORELICK J L,LADBURY R.Proton,neutron,and gamma degradation of optocouplers[J].IEEE Transactions on Nuclear Science,2004,51(12):3730-3735.
[4] LIU En-ke,ZHU Bin-shen,LUO Jin-sheng.Semiconductor physics[M].Beijing: National Defense Industry Press,1994:86.
[5] HU Jin,DU Lei,ZHUANG Yi-qi,et al. Noise as a representation for reliability of light emitting diode[J].Acta Phys Sin, 2006,55(3):1384-1387.
[6] JOHNSTON A H,RAX B G,SELVA L E,et al. Proton degradation of light-emitting diodes[J].IEEE Transactions on Nuclear Science,1999,46(6):1781-1789.
[7] JOHNSTON A H,MIYAHIRA T F.Characterization of proton damage in light-emitting diodes[J].IEEE Trans Nuclear Science,2000,47(6):2500-2507.
[8] JOHNSTON A H.Radiation effects in light-emitting and laser diodes[J].IEEE Trans Nuclear Science,2003,50(3):689-703.
[9] WARNER J H,WALTERS R J,et al.High energy proton radiation effects in GaAs devices[J]. IEEE Trans Nuclear Science,2004,51(5):2887-2895.
[10] BALAKRISHNAN V R.The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT[J].Semiconductor Science and Technology,2005,20(6):783-787.
[11] YANG Rui-xia,ZHANG Fu-qiang.Effects of annealing on native defects and electrical properties of undoped semi-insulating LEC GaAs during annealing[J].Chinese Journal of Rare Metals,2001,25(6):427-431.