[1] M Higashiwaki, K Sasaki, H Murakami, Y Kumagai, A Koukitu, A Kuramata, T Masui, S Yamakoshi. Semicond. Sci. Tech, 31(2016).

[2] S Oh, Y Jung, M A Mastro, J K Hite, C R Eddy, J Kim. Opt. Express, 23(2015).

[3] X Lu, L Zhou, L Chen, X Ouyang, B Liu, J Xu, H Tang. Appl. Phys. Lett, 112(2018).

[4] H H Tippins. Phys. Rev, 140, A316(1965).

[5] S Stepanov, V Nikolaev, V Bougrov, A Romanov. Rev. Adv. Mater. Sci, 44, 63(2016).

[6] H He, R Orlando, M A Blanco, R Pandey, E Amzallag, I Baraille, M Rérat. Phys. Rev. B, 74(2006).

[7] M Higashiwaki, K Sasaki, T Kamimura, M Hoi Wong, D Krishnamurthy, A Kuramata, T Masui, S Yamakoshi. Appl. Phys. Lett, 103(2013).

[8] X Yan, I S Esqueda, J Ma, J Tice, H Wang. Appl. Phys. Lett, 112(2018).

[9] R Roy, V G Hill, E F Osborn. J. Am. Chem. Soc, 74, 719(1952).

[10] Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, M Brützam, R Bertram, S Ganschow, R Fornari. Cryst. Res. Technol, 45, 1229(2010).

[11] E G Víllora, K Shimamura, Y Yoshikawa, K Aoki, N Ichinose. J. Cryst. Growth, 270, 420(2004).

[12] A Kuramata, K Koshi, S Watanabe, Y Yamaoka, T Masui, S Yamakoshi. Jpn. J. Appl. Phys, 55(2016).

[13] Z Zhang, E Farzana, A R Arehart, S A Ringel. Appl. Phys. Lett, 108(2016).

[14] A J Green, K D Chabak, E R Heller, R C Fitch, M Baldini, A Fiedler, K Irmscher, G Wagner, Z Galazka, S E Tetlak, A Crespo. IEEE Electr. Device Lett, 37, 902(2016).

[15] M H Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki. IEEE Electr. Device Lett, 37, 212(2015).

[16] H Tang, N He, H Zhang, B Liu, Z Zhu, M Xu, L Chen, J Liu, X Ouyang, J Xu. CrystEngComm, 22, 924(2020).

[17] T Onuma, S Fujioka, T Yamaguchi, M Higashiwaki, K Sasaki, T Masui, T Honda. Appl. Phys. Lett, 103(2013).

[18] K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari. J. Appl. Phys, 110(2011).

[19] Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, M Naumann, T Schulz, R Schewski, D Klimm, M Bickermann. J. Cryst. Growth, 404, 184(2014).

[20] N Suzuki, S Ohira, M Tanaka, T Sugawara, K Nakajima, T Shishido. Phys. Status Solidi C, 4, 2310(2007).

[21] M H Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki. Appl. Phys. Lett, 106(2015).

[22] A Y Polyakov, N B Smirnov, I V Shchemerov, S J Pearton, F Ren, A V Chernykh, A I Kochkova. Appl. Phys. Lett, 113(2018).

[23] M E Ingebrigtsen, J B Varley, A Y Kuznetsov, B G Svensson, G Alfieri, A Mihaila, U Badstübner, L Vines. Appl. Phys. Lett, 112(2018).

[24] M M Islam, D Rana, A Hernandez, M Haseman, F A Selim. J. Appl. Phys, 125(2019).

[25] A T Neal, S Mou, S Rafique, S Rafique, H Zhao, E Ahmadi, J S Speck, K T Stevens, J D Blevins, D B Thomson, N Moser, K D Chabak. Appl. Phys. Lett, 113(2018).

[26] H He, W Li, H Z Xing, E J Liang. Adv. Mater. Res, 535, 36(2012).

[27] F Ricci, F Boschi, A Baraldi, A Filippetti, M Higashiwaki, A Kuramata, V Fiorentini, R Fornari and. J. Phys.: Condens. Matter, 28(2016).

[28] L Hrivnák. J. Appl. Phys, 62, 3228(1987).

[29] R Fornari, J Kumar. Appl. Phys. Lett, 56, 638(1990).

[30] C A Lenyk, T D Gustafson, L E Halliburton, N C Giles. J. Appl. Phys, 126(2019).

[31] M D Santia, N Tandon, J D Albrecht. Appl. Phys. Lett, 107(2015).

[32] Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, M Higashiwaki, D Jena, T Luo. Appl. Phys. Lett, 106(2015).

[33] M Slomski, N Blumenschein, P P Paskov, J F Muth, T Paskova. J. Appl. Phys, 121(2017).