[1] F. Machuca, Y. Sun, Z. Liu et al.. Prospect for high brightness III-nitride electron emitter[J]. J. Vacuum Science and Technol. B, 2000, 18: 3042~3046
[2] Oswald H.W. Siegmund. High-performance microchannel plate detectors for UV/visible astronomy[J]. Nuclear Instruments and Methods in Physics Research A, 2004, 525: 12~16
[3] O. Siegmund, J. Vallerga, J. Mcphate et al.. Development of GaN photocathodes for UV detectors[J]. Nuclear Instruments and Methods in Physics Research A, 2006, 567: 89~92
[7] Du Xiaoqing, Chang Benkang. Revision of quantum efficiency formula for negative electron affinity photocathodes[J]. Acta Physica Sinica, 2009, 58(12): 8643~8650
[8] Qiao Jianliang, Chang Benkang, Du Xiaoqing et al.. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode[J]. Acta Physica Sinica, 2010, 59(4): 2855~2859
[9] E. L. Michael, L. R. Sergey. Performance and Data Sheets of Advanced Semiconductor Materials[M]. Yang Shuren, Yin Jingzhi Transl.. Beijing: Chemical Industry Press, 2003. 1~43
[10] C. I. Wu, A. Kahn. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces[J]. Appl. Surface Science, 2000, 162-163: 250~255
[11] Du Xiaoqing, Chang Benkang. Angle-dependent X-ray photoelectron spectroscopy study of the mechanisms of “high-low temperature” activation of GaAs photocathode[J]. Applied Surface Science, 2005, 251: 267~272
[12] Qiao Jianliang, Tian Si, Chang Benkang et al.. Activation mechanism of negative electron affinity GaN photocathode[J]. Acta Physica Sinica, 2009, 58(8): 5847~5851