• Acta Optica Sinica
  • Vol. 30, Issue s1, 100103 (2010)
Du Xiaoqing1、*, Chang Benkang2, Qian Yunsheng2, Gao Pin2, Tian Jian1, and Wang Xiaohui2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.3788/aos201030.s100103 Cite this Article Set citation alerts
    Du Xiaoqing, Chang Benkang, Qian Yunsheng, Gao Pin, Tian Jian, Wang Xiaohui. Preparation and Photoemission Performance of Transmission-Mode GaN Ultraviolet Photocathode[J]. Acta Optica Sinica, 2010, 30(s1): 100103 Copy Citation Text show less
    References

    [1] F. Machuca, Y. Sun, Z. Liu et al.. Prospect for high brightness III-nitride electron emitter[J]. J. Vacuum Science and Technol. B, 2000, 18: 3042~3046

    [2] Oswald H.W. Siegmund. High-performance microchannel plate detectors for UV/visible astronomy[J]. Nuclear Instruments and Methods in Physics Research A, 2004, 525: 12~16

    [3] O. Siegmund, J. Vallerga, J. Mcphate et al.. Development of GaN photocathodes for UV detectors[J]. Nuclear Instruments and Methods in Physics Research A, 2006, 567: 89~92

    [4] Zhang Yan, Chu Kaihui, Shao Xiumei et al.. GaN-based 512×1 ultroviolet linear focal plane arrays[J]. Acta Optica Sinica, 2009, 29(12): 3515~3518

    [5] Du Xiaoqing, Chang Benkang, Qian Yunsheng et al.. Experimental investigation of high-low-temperature two-step preparation of GaN UV photocathode material[J]. Acta Optica Sinica, 2010, 30(6): 1734~1738

    [6] Du Xiaoqing, Chang Benkang, Qian Yunsheng et al.. Activation technique of GaN negative electron affinity photocathode[J]. Chinese J. Lasers, 2010, 37(2): 385~388

    [7] Du Xiaoqing, Chang Benkang. Revision of quantum efficiency formula for negative electron affinity photocathodes[J]. Acta Physica Sinica, 2009, 58(12): 8643~8650

    [8] Qiao Jianliang, Chang Benkang, Du Xiaoqing et al.. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode[J]. Acta Physica Sinica, 2010, 59(4): 2855~2859

    [9] E. L. Michael, L. R. Sergey. Performance and Data Sheets of Advanced Semiconductor Materials[M]. Yang Shuren, Yin Jingzhi Transl.. Beijing: Chemical Industry Press, 2003. 1~43

    [10] C. I. Wu, A. Kahn. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces[J]. Appl. Surface Science, 2000, 162-163: 250~255

    [11] Du Xiaoqing, Chang Benkang. Angle-dependent X-ray photoelectron spectroscopy study of the mechanisms of “high-low temperature” activation of GaAs photocathode[J]. Applied Surface Science, 2005, 251: 267~272

    [12] Qiao Jianliang, Tian Si, Chang Benkang et al.. Activation mechanism of negative electron affinity GaN photocathode[J]. Acta Physica Sinica, 2009, 58(8): 5847~5851

    Du Xiaoqing, Chang Benkang, Qian Yunsheng, Gao Pin, Tian Jian, Wang Xiaohui. Preparation and Photoemission Performance of Transmission-Mode GaN Ultraviolet Photocathode[J]. Acta Optica Sinica, 2010, 30(s1): 100103
    Download Citation