Shoujun Zhang, Tun Cao, Zhen Tian. Progress on reconfigurable terahertz metasurface devices based on sulfide phase change materials[J]. Opto-Electronic Engineering, 2023, 50(9): 230142-1
- Opto-Electronic Engineering
- Vol. 50, Issue 9, 230142-1 (2023)
![Terahertz spectral properties and reversible phase transition of GST[57]](/richHtml/gdgc/2023/50/9/230142/1_230142-1.jpg)
Fig. 1. Terahertz spectral properties and reversible phase transition of GST[57]
![Hexadecimal storage memory devices[53]](/richHtml/gdgc/2023/50/9/230142/1_230142-2.jpg)
Fig. 2. Hexadecimal storage memory devices[53]
![Nonvolatile and reconfigurable terahertz wave amplitude modulation devices. (a-c) Fano modulation devices[54]; (d-g) EIT devices[55]; (h-k) EOT devices[56]; (l-o) Dimer devices[57]](/Images/icon/loading.gif){kind=icon}
Fig. 3. Nonvolatile and reconfigurable terahertz wave amplitude modulation devices. (a-c) Fano modulation devices[54]; (d-g) EIT devices[55]; (h-k) EOT devices[56]; (l-o) Dimer devices[57]
Fig. 4. Nonvolatile reconfigurable terahertz wave polarization modulation devices. (a-d) Chiral modulation devices[59]; (e-h) Polarization conversion bifunctional devices[58]; (i-k) Flexible linear polarization conversion devices[61]
Fig. 5. Nonvolatile reconfigurable terahertz wavefront modulation devices. (a-d) Terahertz wave multi-level switching modulation devices[60]; (e-h) Terahertz wave function switching devices[63]; (i-l) Terahertz wave non-lithographic modulation devices[62]
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