• Infrared and Laser Engineering
  • Vol. 34, Issue 1, 31 (2005)
[in Chinese]*, [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Analysis on mechanism of different Zn-H content in as-grown CVDZnSe and CVDZnS[J]. Infrared and Laser Engineering, 2005, 34(1): 31 Copy Citation Text show less
    References

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    [3] Mufit Akinc, Ahmet Celikkaya. Synthesis and hot pressing of ZnS power[A].SPIE[C]. 1989,1112.60-67.

    [4] Ching-Huasu. Bule growth of wide band gap Ⅱ-Ⅵ compound semiconductors by physical vapor transport[A].SPIE[C].1997,3123.7-12.

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    [7] Paul Klocek,Louis E Stone, Maurece W Boucher, et al. Semiconductor infrared optical materials[A].SPIE[C].1988,929.65-68.

    [8] Claude A Kiein,Bernard diBenedetto, Theoccre Kohane. Chemically vapor-deposited zinc sulfide infrared windows: optical properties and physical characteristics[A].SPIE[C].1979,204.88-92.

    [9] Lewis K L, Arthur G S, Banyard S A. Hydrogen-related deffects in vapour-deposited zinc sulfide[J]. J of Crystal Growth, 1984,669:125-136.

    [10] Yu Huaizhi, Song Rui-feng, Huo Chengsong. The study of the relationship between inside defects and optical properties of CVD ZnS[A].SPIE[C]. 2000, 4231.224-227.

    CLP Journals

    [1] Shaohua Wu, Pan Huang, Jingsong Zhao, Yuejin Zhao, Lihe Zheng, Rukun Dong. TTG-CVD based ZnS material preparation[J]. Infrared and Laser Engineering, 2021, 50(10): 20210004

    [in Chinese], [in Chinese], [in Chinese]. Analysis on mechanism of different Zn-H content in as-grown CVDZnSe and CVDZnS[J]. Infrared and Laser Engineering, 2005, 34(1): 31
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