By means of numerical methods, solving equations of current continuity and energy transport, the dynamic response of PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams is studied in which two absorption mechanisms, including intrinsic carriers inter-band transition and free carriers inner-band transition, and dependence of material parameters, lifetime, concentration, transport rate and photoabsorption coefficient of carriers, on detector temperature are considered. It is proved that voltage response of the detector to the irradiation of out-of-band laser is opposite to that of in-band laser. The inverse voltage response to out-of-band laser increases rapidly with laser power. The voltage response to the out-of-band laser increases in the linear region for background-light illumination and decreases while in-band laser power reaches to the saturation threshold.