• Chinese Journal of Lasers
  • Vol. 24, Issue 3, 237 (1997)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Continuous Wave CO2 Laser Induced Diffusion of Zn into GaAs Using a Solid State Diffusion Source[J]. Chinese Journal of Lasers, 1997, 24(3): 237 Copy Citation Text show less
    References

    [1] Daniel J. Ehrlich, Richard M. Osgood, Jr., T. F. Deutsch. Laser microphotochemistry for use in solid-state electronics. IEEE J. Quant. Electron., 1980, QE-16(11): 1233

    [2] A. Slaoui, F. Foulon, P. Siffert. Excimer laser induced doping of phosphorus into silicon. J. Appl. Phys., 1990, 67(10): 6197

    [3] F. Foulon, A. Slaoui, E. Fogarassy et al.. Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Appl. Surf. Sci., 1989, 36: 384

    [4] D. J. Ehrlich, J. Y. Tao. Submicrometer-linewidth doping and relief definition in silicon by laser-controlled diffusion. Appl. Phys. Lett., 1982, 41(3): 297

    [5] A. Slaoui, F. Foulon, P. Siffert. Excimer laser induced doping of phosphorus into silicon. J. Appl. Phys., 1990, 67(10): 6197

    [6] P. Baeri, S. U. Campisano, G. Foti et al.. Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing. Appl. Phys. Lett., 1978, 33(2): 137

    [7] D. Banerle. Laser processing and diagnostics, Springer Series in Chemical Physics. Berlin, Springer, 1984

    [8] D. J. Ehrlich, R. M. Osgood, Jr., T. F. Deutsch. Direct writing of regions of high doping on semiconductors by UV-laser photodeposition. Appl. Phys. Lett., 1980, 36(11): 916

    [9] G. G. Bentini, M. Bianconi, L. Correra et al.. Laser doping of silicon: role of the surface status in the incorporation mechanism. Appl. Surf. Sci., 1989, 36: 394

    [10] S. Kato, T. Nagahori, S. Matsumoto. ArF excimer laser doping of boron into silicon. J. Appl. Phys., 1987, 62(9): 3656

    [11] J. Narayan, R. T. Yong, R. F. Wood. P-N junction formation in boron-deposited silicon by laser-induced diffusion. Appl. Phys. Lett., 1978, 33(4): 338

    [12] K. Sera, F. Okumura, S. Kaneka. Excimer-laser doping into Si thin films. J. Appl. Phys., 1990, 67(5): 2359

    CLP Journals

    [1] [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Improving of the Equipment of Laser Assisted Microprocessing Used in OEICs[J]. Chinese Journal of Lasers, 2007, 34(s1): 227

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Continuous Wave CO2 Laser Induced Diffusion of Zn into GaAs Using a Solid State Diffusion Source[J]. Chinese Journal of Lasers, 1997, 24(3): 237
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