The P-N junctions were produced by continuous wave (CW) CO 2 induced diffusion of Zn into a GaAs substrate using a solid state diffusion source. After the samples were exposed to the laser radiation, the features of the exposed region were studied by scaning electron microscopy (SEM), and the dopant profiles were examined using a secondary ion mass spectrometry (SIMS). The performance parameters of the P-N junctions such as xj and C(x,t,T) are presented as functions of the diffusion time t and temperature T. The experimental results show that the junction depth xj reaches submicron and the dopant concentration is of the order of 20 20 cm -3.