Based on a 150 mm 0.35 μm CMOS process, in the NMOS and PMOS devices, Polysilicon-Insulator-Polysilicon (PIP) capacitors and N+ type polysilicon resistors with different bending radii on a 50 μm silicon substrate in a uniaxial state, the influence of tension and compression on the changes in electrical parameters of the devices was simulated by using the Silvaco TCAD software. The results show that the uniaxial tensile and compressive bending can make the threshold voltage of NMOS drift 0.46 mV and PMOS 0.33 mV. The drain current changes linearly with the amount of deformation. The coefficient of NMOS compression is -0.132 95, and the coefficient of NMOS tension is 0.006 01. The coefficient of PMOS tension is -0.104 47, and the coefficient of PMOS compression is -0.110 7. The resistance value changes linearly with the amount of deformation. When the doping concentration is 1×1019, 2×1019, 3×1019, 4×1019, 5 ×1019, the coefficient is 247, 498, 766, 1 016, 1 301 respectively. The maximum change of the capacitance value and the initial value do not exceed 0.5%, and the conclusion is that there is no mismatch effect. These results are consistent with experimental changes, demonstrating the correctness of the model and laying the foundation for the development of flexible silicon-based integrated circuits with reduced degradation.