GaSb based optically pumped semiconductor disk lasers (OP-SDLs) attracts considerable attention in novel mid-infrared laser device research field for their potential excellent beam quality and high output power. The epitaxy structure and basic principle of GaSb based OP-SDLs wafers were summarized. The development of GaSb based OP-SDLs at 2 μm wavelength was reviewed respectively by analyzing the aspects of wavelength extending, power scaling, line-width narrowing, short-pulse generation and effective thermal management. The technical development direction and application prospects of this type of laser were discussed.