• Chinese Physics B
  • Vol. 29, Issue 10, (2020)
Hui-Fang Xu, Xin-Feng Han, and Wen Sun
Author Affiliations
  • Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China
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    DOI: 10.1088/1674-1056/ab9c06 Cite this Article
    Hui-Fang Xu, Xin-Feng Han, Wen Sun. Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis[J]. Chinese Physics B, 2020, 29(10): Copy Citation Text show less
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    Hui-Fang Xu, Xin-Feng Han, Wen Sun. Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis[J]. Chinese Physics B, 2020, 29(10):
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