Hui-Fang Xu, Xin-Feng Han, Wen Sun. Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis[J]. Chinese Physics B, 2020, 29(10):
- Chinese Physics B
- Vol. 29, Issue 10, (2020)
Fig. 1. Structure of devices of (a) PT−DLTFET, (b) LT−DLTFET, and (c) M−LT−DLTFET.
Fig. 2. Plot of energy varying with distance for M−LT−DLTFET along (a) A–A’ direction, and (b) B–B’ direction under on-state condition, (c) plots of electron and hole concentrations varying with top-bottom distance along B–B’ direction under on-state condition.
Fig. 3. (a) Electric field varying with distance along cutline A–A’, (b) electron current density varying with distance along cutline A–A’, (c) transfer characteristics, and (d) extracted SS varying with I ds for the devices.
Fig. 4. Plots of energy varying with distance at different values of L TGS (a) along cutline A–A’ when V gs is fixed at 0.2 V, (b) along cutline A–A’ when V gs is fixed at 1 V, (c) along cutline B–B’ when V gs is fixed at 0.2 V, and (d) along cutline B–B’ when V gs is fixed at 1 V.
Fig. 5. (a) Transfer characteristics, and (b) electric fields varying with distance along A–A’ direction for proposed device with different distances between source and top-gate electrode.
Fig. 6. (a) Transfer characteristics, and (b) energy varying with distance along A–A’ direction for proposed device with different distances between top-gate and drain electrode.
Fig. 7. Plots of energyvarying with distance along (a) A–A’, and (b) C–C’ direction for proposed device with different distances between bottom-gate and drain electrode.
Fig. 8. Plots of I dsversus V gs for M−LT−DLTFET with metal at different positions along (a) x direction and (b) y direction, (c) for different work functions of metal.
Fig. 9. Plots of (a) g m, (b) C gd, (c) C ggversus V gs for three devices.
Fig. 10. RF parameters of (a) f t, (b) GBP, and (c) TFP for three devices.
Fig. 11. Plots of (a) g m2, and (b) g m3versus V gs for three devices.
Fig. 12. Linearity parameters of (a) V IP2, (b) V IP3, (c) IIP3, and (d) IMD3 for three devices.
Fig. 13. Plots of (a) HD2, and (b) HD3versus V gs for three devices.
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Table 1. Material parameters and dimensions of devices.
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Table 2. Comparison of DC parameter among devices.
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