• Microelectronics
  • Vol. 51, Issue 2, 157 (2021)
HUANG Zhengfeng1, LI Xueyun1, YANG Xiao1, QI Haochen1, LU Yingchun1, WANG Jian’an2, NI Tianming3, and XU Qi1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200196 Cite this Article
    HUANG Zhengfeng, LI Xueyun, YANG Xiao, QI Haochen, LU Yingchun, WANG Jian’an, NI Tianming, XU Qi. A Novel Low Power Radiation Hardened SRAM Memory Cell[J]. Microelectronics, 2021, 51(2): 157 Copy Citation Text show less
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    HUANG Zhengfeng, LI Xueyun, YANG Xiao, QI Haochen, LU Yingchun, WANG Jian’an, NI Tianming, XU Qi. A Novel Low Power Radiation Hardened SRAM Memory Cell[J]. Microelectronics, 2021, 51(2): 157
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