• Chinese Physics B
  • Vol. 29, Issue 10, (2020)
Shan Li1,2, Jun Lu1,3,†, Si-Wei Mao1,2, Da-Hai Wei1,2,3, and Jian-Hua Zhao1,2,3
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 00083, China
  • 2Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3Beijing Academy of Quantum Information Science, Beijing 10019, China
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    DOI: 10.1088/1674-1056/ab99ac Cite this Article
    Shan Li, Jun Lu, Si-Wei Mao, Da-Hai Wei, Jian-Hua Zhao. Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE[J]. Chinese Physics B, 2020, 29(10): Copy Citation Text show less
    (a) Schematic diagram of sample structure, (b) microscope photograph of Hall bar device (120 μm × 10 μm), (c) x-ray diffraction spectrum of the Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (3 nm) structure, and (d) fitted peaks of Pt (002) and MnGa (002) of the Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (3 nm) structure, with black, red, pink, and blue curves representing the experimental data, fitted sum of peaks, fitted Pt (002) peak, and fitted MnGa (002) peak, respectively.
    Fig. 1. (a) Schematic diagram of sample structure, (b) microscope photograph of Hall bar device (120 μm × 10 μm), (c) x-ray diffraction spectrum of the Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (3 nm) structure, and (d) fitted peaks of Pt (002) and MnGa (002) of the Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (3 nm) structure, with black, red, pink, and blue curves representing the experimental data, fitted sum of peaks, fitted Pt (002) peak, and fitted MnGa (002) peak, respectively.
    (a) RAH loop and (b) out-of-plane magnetic hysteresis loop at room temperature of sample R. (c) RAH loops of sample A at different temperatures. (d) Plots of temperature-dependent coercivity and out-of-plane remnant magnetization of sample A. (e) Plot of temperature-dependent out-of-plane remnant magnetization of sample A. (f) Remnant Hall resistance varying with temperature of sample A, showing opposite magnetic configurations in the process of temperature changing. (g) Schematic diagrams of the magnetic moment states at points A, B, C and D of (e) with “↑” and “↓” representing the magnetic moments parallel and antiparallel to the positive direction separately.
    Fig. 2. (a) RAH loop and (b) out-of-plane magnetic hysteresis loop at room temperature of sample R. (c) RAH loops of sample A at different temperatures. (d) Plots of temperature-dependent coercivity and out-of-plane remnant magnetization of sample A. (e) Plot of temperature-dependent out-of-plane remnant magnetization of sample A. (f) Remnant Hall resistance varying with temperature of sample A, showing opposite magnetic configurations in the process of temperature changing. (g) Schematic diagrams of the magnetic moment states at points A, B, C and D of (e) with “↑” and “↓” representing the magnetic moments parallel and antiparallel to the positive direction separately.
    RAH loop at (a) 280 K and (b) 240 K and SOT-induced switching loop at (c) 280 K and (d) 240 K, of sample B (Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (5 nm)).
    Fig. 3. RAH loop at (a) 280 K and (b) 240 K and SOT-induced switching loop at (c) 280 K and (d) 240 K, of sample B (Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (5 nm)).
    Shan Li, Jun Lu, Si-Wei Mao, Da-Hai Wei, Jian-Hua Zhao. Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE[J]. Chinese Physics B, 2020, 29(10):
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