Shan Li, Jun Lu, Si-Wei Mao, Da-Hai Wei, Jian-Hua Zhao. Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE[J]. Chinese Physics B, 2020, 29(10):

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- Chinese Physics B
- Vol. 29, Issue 10, (2020)

Fig. 1. (a) Schematic diagram of sample structure, (b) microscope photograph of Hall bar device (120 μm × 10 μm), (c) x-ray diffraction spectrum of the Co2MnSi (0.7 nm)/L 10–MnGa (3 nm)/Pt (3 nm) structure, and (d) fitted peaks of Pt (002) and MnGa (002) of the Co2MnSi (0.7 nm)/L 10–MnGa (3 nm)/Pt (3 nm) structure, with black, red, pink, and blue curves representing the experimental data, fitted sum of peaks, fitted Pt (002) peak, and fitted MnGa (002) peak, respectively.

Fig. 2. (a) R AH loop and (b) out-of-plane magnetic hysteresis loop at room temperature of sample R. (c) R AH loops of sample A at different temperatures. (d) Plots of temperature-dependent coercivity and out-of-plane remnant magnetization of sample A. (e) Plot of temperature-dependent out-of-plane remnant magnetization of sample A. (f) Remnant Hall resistance varying with temperature of sample A, showing opposite magnetic configurations in the process of temperature changing. (g) Schematic diagrams of the magnetic moment states at points A, B, C and D of (e) with “↑” and “↓” representing the magnetic moments parallel and antiparallel to the positive direction separately.

Fig. 3. R AH loop at (a) 280 K and (b) 240 K and SOT-induced switching loop at (c) 280 K and (d) 240 K, of sample B (Co2MnSi (0.7 nm)/L 10–MnGa (3 nm)/Pt (5 nm)).
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