• Chinese Physics B
  • Vol. 29, Issue 10, (2020)
Shan Li1、2, Jun Lu1、3、†, Si-Wei Mao1、2, Da-Hai Wei1、2、3, and Jian-Hua Zhao1、2、3
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 00083, China
  • 2Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3Beijing Academy of Quantum Information Science, Beijing 10019, China
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    DOI: 10.1088/1674-1056/ab99ac Cite this Article
    Shan Li, Jun Lu, Si-Wei Mao, Da-Hai Wei, Jian-Hua Zhao. Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE[J]. Chinese Physics B, 2020, 29(10): Copy Citation Text show less

    Abstract

    A synthetic antiferromagnet based on a thin antiferromagnetically coupled Co2MnSi/MnGa bilayer with Pt capping is proposed in this work. Square magnetic loops measured by anomalous Hall effect reveal that a well perpendicular magnetic anisotropy is obtained in this structure. A very large coercivity of 83 kOe (1 Oe = 79.5775 A?m-1) is observed near the magnetic moment compensation point of 270 K, indicating an antiferromagnetic behavior. Moreover, the anomalous Hall signal does not go to zero even at the magnetic compensation point, for which the difficulty in detecting the conventional antiferromagnets can be overcome. By changing the temperature, the polarity of the spin–orbit torque induced switching is changed around the bilayer compensation point. This kind of thin bilayer has potential applications in spin–orbit-related effects, spintronic devices, and racetrack memories.
    Shan Li, Jun Lu, Si-Wei Mao, Da-Hai Wei, Jian-Hua Zhao. Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE[J]. Chinese Physics B, 2020, 29(10):
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