[1] L. T. Canham. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers ［J］. Appl. Phys. Lett., 1990, 57(10): 1046～1048
[2] H. Watanabe, K. Haga, T. Lohner. A structural interpretation of Si-O-Si vibrational absorption of high-photoconductive amorphous a-SiOxH films ［J］. J. Non-Cryst. Solids, 1993, 164-166: 1085～1088
[3] M. Bhat, L. K. Han, D. Wristers et al.. Effects of chemical composition on the electrical properties of NO-nitrided SiO2 ［J］. Appl. Phys. Lett., 1995, 66(10): 1225～1227
[4] R. Janssena, U. Karrera, D. Dimova-Malinovska et al.. Amorphous silicon suboxide light-emitting diodes ［J］. J. Non-Cryst. Solids, 1998, 227-230: 1151～1155
[5] Yonghua Xu, Takahiro Fujino, Seiji Watase et al.. Enhanced ultraviolet emission in polysilane light-emitting diodes by inserting a SiOx thin layer ［J］. Jpn. J. Appl. Phys., 1999, 38(4B): 2609～2612
[6] L. F. Bian, C. G. Zhang, W. D. Chen et al.. Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering ［J］. J. Appl. Phys., 2006, 99(9): 094302
[7] H. Rinnert, M. Vergnat, G. Marchal. Structure and optical properties of amorphous SiOx thin films prepared by co-evaporation of Si and SiO ［J］. Mater. Sci. Eng. B, 2000, 69-70: 484～488
[8] F. Hiromitsu Kato, Akira Masuzawa, Takashi Noma et al.. Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride ［J］. J. Phys.: Condens. Matter, 2001, 13(30): 6541～6549
[10] Ma Zhixun, Liao Xianbo, He Jie et al.. Origins of strong visible photoluminescence from a-SiOxH ［J］. Chinese J. Semiconductors, 1999, 20(2): 162～167
[11] S. M. Prokes, W. E. Carlos, S. Veprek et al.. Defect studies in as-deposited and processed nanocrystalline Si/SiO2 structures ［J］. Phys. Rev. B, 1998, 58(23): 15632～15635
[12] R. Carius, R. Fischer, J. Stuke et al.. Photoluminescence in the amorphous system SiOx ［J］. J. Appl. Phys., 1981, 52(6): 239～244
[13] S. Hasegawa, L. He, T. Inokuma et al.. Analysis of photo emission in amorphous SiOx and SiNx alloys in terms of a charge-transfer model ［J］. Phys. Rev. B, 1992, 46(19): 12478～12484
[14] Sumita Mukhopadhyay, Swati Ray. Silicon rich silicon oxide films deposited by radio frequency plasma enhanced chemical vapor deposition method: optical and structural properties ［J］. Appl. Surf. Sci., 2011, 257(23): 9717～9723
[15] Ding Wenge, Yuan Jing, Li Wenbo et al.. Temperature dependent optical absorption of silicon nanostructure thin film［J］. Acta Optica Sinica, 2011, 31(5): 0531002
[16] M. Wang, M. Xie, L. Ferraioli et al.. Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. Room-temperature band tail states photoluminescence ［J］. J. Appl. Phys., 2008, 104(8): 083504
[17] R. A. Street. Luminescence and recombination in hydrogenated amorphous silicon ［J］. Adv. Phys., 1982, 30(5): 593～676
[18] F. Boulitrop, D. J. Dunstan. Phonon interactions in the tail states of a-SiH ［J］. Phys. Rev. B, 1983, 28(10): 5923～5929
[19] F. Giorgis, P. Mandracci, L. Dal Negro et al.. Optical absorption and luminescence properties of wide-band gap amorphous silicon based alloys ［J］. J. Non-Cryst. Solids, 2000, 266-269: 588～592
[20] J. Kister, X. Chen, Y. Weng et al.. Photoluminescence from silicon nitride—no quantum effect［J］. J. Appl. Phys., 2011, 110(2): 023520
[21] L. Ley, T. Searle. Properties of Amorphous Silicon and its Alloys［M］. London: INSPEC, 1998. 113
