• Acta Optica Sinica
  • Vol. 24, Issue 2, 264 (2004)
[in Chinese]*, [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article Set citation alerts
    [in Chinese], [in Chinese], [in Chinese]. Sensitization of Ga3+ Ion on the Characteristic Fluorescence of Tb3+∶YAG Layers Grown by LPE[J]. Acta Optica Sinica, 2004, 24(2): 264 Copy Citation Text show less
    References

    [1] Blasse G, Bril A. Investigations of Tb3+-activated phosphor. Philips Res. Repts., 1967, 22:481~504

    [2] Blasse G, Bril A. Investigation of some Ce3+-activated phosphors. J. Chem. Phys., 1967, 47(12):5139~5145

    [5] Ohno K, Abe T. Bright green phosphor Y3Al5-yGaxO12:Tb for projection CRT. J. Electrochem. Soc., 1987, 134(8):2072~2076

    [6] Robbins D J, Cockayne B, Lent B et al.. The relationship between concentration and efficiency in rare earth activated phosphors. J. Electrochem. Soc.: Solid-State Science and Technology, 1979, 126(9):1556~1563

    [in Chinese], [in Chinese], [in Chinese]. Sensitization of Ga3+ Ion on the Characteristic Fluorescence of Tb3+∶YAG Layers Grown by LPE[J]. Acta Optica Sinica, 2004, 24(2): 264
    Download Citation