Wenyu Cao, Wenyi Wang. Research on Spectral Shift of InGaN/GaN Multiple Quantum Well with Strain Modulation[J]. Laser & Optoelectronics Progress, 2020, 57(15): 152305
- Laser & Optoelectronics Progress
- Vol. 57, Issue 15, 152305 (2020)
Fig. 1. Schematic diagram of the device structure. (a) Structure of epitaxial wafer; (b) structure of traditional MQW; (c) structure of strained-layer MQW
Fig. 2. MQW photoluminescence spectra at different temperatures. (a) Structure of traditional MQW; (b) structure of strained-layer MQW
Fig. 3. MQW photoluminescence spectra peak energies at different excitation power densities. (a) Structure of traditional MQW; (b) structure of strained-layer MQW
Fig. 4. PL spectrum peaks of InGaN strain-layer at different excitation power densities
Fig. 5. EL spectra of two MQWs at injection current of 20 mA
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Table 1. Blue-shift of peak energy at different excitation power densities
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