[1] Rogalski A. Infrared detectors: status and trends [J]. Progress in Quantum Electronics, 2003, 27(2-3):59-210.
[2] Maimon S, Wicks G W. nBn detector, an infrared detector with reduced dark current and higher operating temperature [J]. Applied Physics Letters, 2006, 89(15):151109.
[3] Pedrazzani J R, Maimon S, Wicks G W. Use of nBn structure to suppress surface leakage currents in unpassivated InAs infrared photodetectors [J]. Electronics Letters, 2008, 44(25):1487-1488.
[4] Weiss E, Klin O, Grossmann S, et al. InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs [J]. Journal of Crystal Growth, 2012, 339(1):31-35.
[5] Craig A P, Marshall A R J, Tian Z B, et al. Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers-Grown on GaAs, using an interfacial misfit array, and on native GaSb [J]. Infrared Physics & Technology, 2014, 67:210-213.
[6] Dey A W, Borg B M, Ganjipour B, et al. High-current GaSb/InAs(Sb) nanowire tunnel field-effect transistors [J]. IEEE Electron Device Letters, 2013, 34(2):211-213.
[7] Nainani A, Yuan Z, Krishnamohan T, et al. InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design [J]. Journal of Applied Physics, 2011, 110(1):014503.
[8] Bennett B R, Magno R, Boos J B, et al. Antimonide-based compound semiconductors for electronic devices: A review [J]. Solid-State Electronics, 2005, 49(12):1875-1895.
[9] Vurgaftman I, Meyer J R, Julien F H, et al. Design and simulation of low-threshold antimonide intersubband lasers [J]. Applied Physics Letters, 1998, 73(6):711-713.
[10] Dente G C, Tilton M L, Ongstad A P, et al. Wavelength tuning predictions and experiments for type II antimonide lasers [J]. Journal of Applied Physics, 2008, 103(2):023106.
[11] Sharabani Y, Paltiel Y, Sher A, et al. GaSb/InAsSb heterostructure MWIR detector for high temperature operation [J]. Proc. of SPIE, 2008, 6940: 69400D-1.
[12] Wang D, Donetsky D, Kipshidze G, et al. Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region [J]. Applied Physics Letters, 2013, 103(5):051120.