Composition control of InAsxSb1-x grown by molecular beam epitaxy

SUN Qing-Ling; WANG Lu; YAO Guan-Sheng; CAO Xian-Cun; WANG Wen-Qi; SUN Ling; WANG Wen-Xin; JIA Hai-Qiang; CHEN Hong

doi:10.11972/j.issn.1001-9014.2016.04.001

Journals >Journal of Infrared and Millimeter Waves >Volume 35 >Issue 4 >Page 386 > Article

Journal of Infrared and Millimeter Waves
Vol. 35, Issue 4, 386 (2016)

Composition control of InAsxSb1-x grown by molecular beam epitaxy

SUN Qing-Ling^1、2、*, WANG Lu^1、2, YAO Guan-Sheng³, CAO Xian-Cun³, WANG Wen-Qi^1、2, SUN Ling^1、2, WANG Wen-Xin^1、2, JIA Hai-Qiang^1、2, and CHEN Hong^1、2

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: 10.11972/j.issn.1001-9014.2016.04.001 Cite this Article

SUN Qing-Ling, WANG Lu, YAO Guan-Sheng, CAO Xian-Cun, WANG Wen-Qi, SUN Ling, WANG Wen-Xin, JIA Hai-Qiang, CHEN Hong. Composition control of InAsxSb1-x grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2016, 35(4): 386 Copy Citation Text

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Abstract

The molecular beam epitaxy growth of InAsSb film is presented. Dependence of Sb compositions on Sb4 fluxes was studied. Utilizing the high combination tendency of In and Sb atoms, the composition of InAsSb layer is highly controlled.

Keywords

composition control InAsSb molecular beam epitaxy(MBE)

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