Raman scattering investigation of InAlAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is reported. The changes of QDs size, density and uniformity in their growing process from the AFM images are analyzed together with the FWHM of Raman peaks. Moreover, the relation between the Raman lines and the structure characteristics of QDs is studied. Comparing those samples with different InAlAs thicknesses, it is found that the width/height ratio has some relation with the widening of GaAs-like LO and AlAs-like LO modes. It also confirms that this kind of phonons is Raman inactive in the Z(X, X)Z polarization.