The main problem of eutectic die attach in military ceramics or metal packaging is that Sn based solder is easily oxidized to form Sn2O, SnO2 and other oxides, which will be constantly accumulated on the solder surface in the chip eutectic die attach process, forming the surface suspended particles of the solder, resulting in PIND failure. Based on the oxide film rupture theory, this paper realizes the high-purity nitrogen protection environment by improving the structure of eutectic sintered nitrogen protection currently used, and adopting a small semi-closed cavity. In the eutectic die attach process, the oxide film rupture was integrated into the solder body, and the molten solder that flowed out due to the oxide film rupture formed a new bright and rounded solder surface in good nitrogen protection environment, effectively reducing the suspended oxide particles on the solder surface. A large number of statistical data show that the improved study effectively reduces the PIND failure rate and the cost loss of the finished circuit. On the other hand, it was realized that very few suspended oxide particles were generated on the surface of the eutectic solder, which greatly reduced the hazard and reliability risk of short and open circuit and other malfunctions caused by movable particles.