• Laser & Optoelectronics Progress
  • Vol. 47, Issue 5, 51401 (2010)
Gao Jianxia1、* and Song Guofeng2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop47.051401 Cite this Article Set citation alerts
    Gao Jianxia, Song Guofeng. Study of Subwavelength Hole Array Vertical-Cavity Surface-Emitting Laser[J]. Laser & Optoelectronics Progress, 2010, 47(5): 51401 Copy Citation Text show less

    Abstract

    Subwavelength hole array vertical-cavity surface-emitting laser (VCSEL) is fabricated based on high power 980 nm VCSEL. The far-field output power reaches 1 mW. The special fabrication process is introduced and the characteristic of the device is also analyzed.
    Gao Jianxia, Song Guofeng. Study of Subwavelength Hole Array Vertical-Cavity Surface-Emitting Laser[J]. Laser & Optoelectronics Progress, 2010, 47(5): 51401
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