• Chinese Journal of Lasers
  • Vol. 51, Issue 7, 0701010 (2024)
Xiaoran Li1、2, Hetao Tang1、2, Jiaoling Zhao2、*, and Fenghua Li2
Author Affiliations
  • 1School of Microelectronics, Shanghai University, Shanghai 200072, China
  • 2Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    DOI: 10.3788/CJL231495 Cite this Article Set citation alerts
    Xiaoran Li, Hetao Tang, Jiaoling Zhao, Fenghua Li. Research Progress of Beyond Extreme Ultraviolet Multilayers at 6.X nm[J]. Chinese Journal of Lasers, 2024, 51(7): 0701010 Copy Citation Text show less
    Trend for the development of lithographic light sources regarding wavelength
    Fig. 1. Trend for the development of lithographic light sources regarding wavelength
    Schematic of the main optical components in an EUV lithography system[30]
    Fig. 2. Schematic of the main optical components in an EUV lithography system[30]
    Schematic view of Bragg diffraction for PMMs
    Fig. 3. Schematic view of Bragg diffraction for PMMs
    Real and imaginary parts of the refractive index at 6.7 nm for typical elements (original data obtained from Lawrence Berkeley National Laboratory)[38]
    Fig. 4. Real and imaginary parts of the refractive index at 6.7 nm for typical elements (original data obtained from Lawrence Berkeley National Laboratory)[38]
    Calculated results of La/B4C multilayers. (a) Reflectivity curve; (b) curve of reflectivity changing with number of periods; (c) curve of reflectivity variation with substrate roughness
    Fig. 5. Calculated results of La/B4C multilayers. (a) Reflectivity curve; (b) curve of reflectivity changing with number of periods; (c) curve of reflectivity variation with substrate roughness
    Calculated results of La/B4C multilayers. (a) Variation of central wavelength of multilayers with different periodic thicknesses; (b) variation of peak reflectivity of multilayers with different interface widths
    Fig. 6. Calculated results of La/B4C multilayers. (a) Variation of central wavelength of multilayers with different periodic thicknesses; (b) variation of peak reflectivity of multilayers with different interface widths
    Schematic of La/B4C multilayers with barrier layer of carbon[55]. (a) Structures of La/B4C with carbon barrier layer inserted on different interfaces; (b) zoomed-in depth profiles of La+ measured by using TOF-SIMS (reprinted and adapted from Ref. [55] with permission from Elsevier)
    Fig. 7. Schematic of La/B4C multilayers with barrier layer of carbon[55]. (a) Structures of La/B4C with carbon barrier layer inserted on different interfaces; (b) zoomed-in depth profiles of La+ measured by using TOF-SIMS (reprinted and adapted from Ref. [55] with permission from Elsevier)
    Experiments on the nitridation of La/B interface[7]. (a) Schematic of La/B-based multilayer prepared by using the delayed nitridation method; (b) calculated peak reflectivity for LaN/B multilayers, with BN and LaB6 as interlayers on the LaN-on-B interface (adapted with permission from Ref. [7] © The Optical Society)
    Fig. 8. Experiments on the nitridation of La/B interface[7]. (a) Schematic of La/B-based multilayer prepared by using the delayed nitridation method; (b) calculated peak reflectivity for LaN/B multilayers, with BN and LaB6 as interlayers on the LaN-on-B interface (adapted with permission from Ref. [7] © The Optical Society)
    Annealing experiments for La/B4C and LaN/B4C multilayers[65]. (a) Period thicknesses of the La/B4C and LaN/B4C multilayer, for annealing temperatures up to 800 ℃; (b) EUV reflectance curves of the La/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively; (c) EUV reflectance curves of the LaN/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively (reprinted and adapted from Ref. [65] with permission from Elsevier)
    Fig. 9. Annealing experiments for La/B4C and LaN/B4C multilayers[65]. (a) Period thicknesses of the La/B4C and LaN/B4C multilayer, for annealing temperatures up to 800 ℃; (b) EUV reflectance curves of the La/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively; (c) EUV reflectance curves of the LaN/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively (reprinted and adapted from Ref. [65] with permission from Elsevier)
    Light sourceAdvantageDisadvantage
    FELHigh radiation brightness,high power,high efficiency,wide tunability of wavelength,ultra-short pulses19

    Limited output power in narrowband,

    large volume of existing facilities15

    LPPLow debris,feasible power scalability,small & stable plasma spot,design freedom around plasma28Lower conversion efficiency from electricity to EUV,complicated system28
    LDPSimple structure,better target utilization,high energy injection27High thermal load on the electrodes,more prone to corrosion29
    Table 1. Advantages and disadvantages of different BEUV light sources
    Year

    PMMs

    structure

    d /nmΓPeriod

    Interface roughness

    σ /nm

    Measured

    (theoretical)

    reflectivity /%

    Deposition methodReference
    2013W/B4C3.470.2850

    0.3/0.47

    (W-on-B4C/B4C-on-W)

    7.6Magnetron sputtering58
    2013La/B4C/C3.350.5N/AN/A58.6Magnetron sputtering54
    2013La/B3.48N/A40N/A4.5Electron beam evaporation57
    2013LaN/B3.5N/A175N/A57.3(60)Magnetron sputtering57
    2015La/B4C4.80.4120

    0.4/0.9

    (La-on-B4C/B4C-on-La)

    54.4(69.7)DC magnetron sputtering36
    2015La/LaN/B3.4N/A220N/A64.1DC magnetron sputtering7
    2017La/B4C3.4N/A250

    0.4/1.5

    (La-on-B4C/B4C-on-La)

    51.1DC magnetron sputtering59
    2017LaN/B4C3.4N/A250

    0.4/1.2

    (LaN-on-B4C/B4C-on-LaN)

    58.1DC magnetron sputtering59
    2020MoXC1-X/B4C3.60.4100

    0.2/0.3

    (MoXC1-X-on-B4C/B4C-on- MoXC1-X

    10DC magnetron sputtering60
    2021Mo/B3.40.353000.3‒0.453(63)DC and RF magnetron sputtering40
    2023C/B3.350.6220N/AN/A(58)RF magnetron sputtering61
    Table 2. Summary of relevant parameters for BEUV multilayers
    Xiaoran Li, Hetao Tang, Jiaoling Zhao, Fenghua Li. Research Progress of Beyond Extreme Ultraviolet Multilayers at 6.X nm[J]. Chinese Journal of Lasers, 2024, 51(7): 0701010
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