Author Affiliations
1School of Microelectronics, Shanghai University, Shanghai 200072, China2Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, Chinashow less
Fig. 1. Trend for the development of lithographic light sources regarding wavelength
Fig. 2. Schematic of the main optical components in an EUV lithography system
[30] Fig. 3. Schematic view of Bragg diffraction for PMMs
Fig. 4. Real and imaginary parts of the refractive index at 6.7 nm for typical elements (original data obtained from Lawrence Berkeley National Laboratory)
[38] Fig. 5. Calculated results of La/B4C multilayers. (a) Reflectivity curve; (b) curve of reflectivity changing with number of periods; (c) curve of reflectivity variation with substrate roughness
Fig. 6. Calculated results of La/B4C multilayers. (a) Variation of central wavelength of multilayers with different periodic thicknesses; (b) variation of peak reflectivity of multilayers with different interface widths
Fig. 7. Schematic of La/B
4C multilayers with barrier layer of carbon
[55]. (a) Structures of La/B
4C with carbon barrier layer inserted on different interfaces; (b) zoomed-in depth profiles of La
+ measured by using TOF-SIMS (reprinted and adapted from Ref. [
55] with permission from Elsevier)
Fig. 8. Experiments on the nitridation of La/B interface
[7]. (a) Schematic of La/B-based multilayer prepared by using the delayed nitridation method; (b) calculated peak reflectivity for LaN/B multilayers, with BN and LaB
6 as interlayers on the LaN-on-B interface (adapted with permission from Ref. [
7] © The Optical Society)
Fig. 9. Annealing experiments for La/B
4C and LaN/B
4C multilayers
[65]. (a) Period thicknesses of the La/B
4C and LaN/B
4C multilayer, for annealing temperatures up to 800 ℃; (b) EUV reflectance curves of the La/B
4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively; (c) EUV reflectance curves of the LaN/B
4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively (reprinted and adapted from Ref. [
65] with permission from Elsevier)
Light source | Advantage | Disadvantage |
---|
FEL | High radiation brightness,high power,high efficiency,wide tunability of wavelength,ultra-short pulses[19] | Limited output power in narrowband, large volume of existing facilities[15] | LPP | Low debris,feasible power scalability,small & stable plasma spot,design freedom around plasma[28] | Lower conversion efficiency from electricity to EUV,complicated system[28] | LDP | Simple structure,better target utilization,high energy injection[27] | High thermal load on the electrodes,more prone to corrosion[29] |
|
Table 1. Advantages and disadvantages of different BEUV light sources
Year | PMMs structure | d /nm | Γ | Period | Interface roughness σ /nm | Measured (theoretical) reflectivity /% | Deposition method | Reference |
---|
2013 | W/B4C | 3.47 | 0.28 | 50 | 0.3/0.47 (W-on-B4C/B4C-on-W) | 7.6 | Magnetron sputtering | [58] | 2013 | La/B4C/C | 3.35 | 0.5 | N/A | N/A | 58.6 | Magnetron sputtering | [54] | 2013 | La/B | 3.48 | N/A | 40 | N/A | 4.5 | Electron beam evaporation | [57] | 2013 | LaN/B | 3.5 | N/A | 175 | N/A | 57.3(60) | Magnetron sputtering | [57] | 2015 | La/B4C | 4.8 | 0.4 | 120 | 0.4/0.9 (La-on-B4C/B4C-on-La) | 54.4(69.7) | DC magnetron sputtering | [36] | 2015 | La/LaN/B | 3.4 | N/A | 220 | N/A | 64.1 | DC magnetron sputtering | [7] | 2017 | La/B4C | 3.4 | N/A | 250 | 0.4/1.5 (La-on-B4C/B4C-on-La) | 51.1 | DC magnetron sputtering | [59] | 2017 | LaN/B4C | 3.4 | N/A | 250 | 0.4/1.2 (LaN-on-B4C/B4C-on-LaN) | 58.1 | DC magnetron sputtering | [59] | 2020 | MoXC1-X/B4C | 3.6 | 0.4 | 100 | 0.2/0.3 (MoXC1-X-on-B4C/B4C-on- MoXC1-X) | 10 | DC magnetron sputtering | [60] | 2021 | Mo/B | 3.4 | 0.35 | 300 | 0.3‒0.4 | 53(63) | DC and RF magnetron sputtering | [40] | 2023 | C/B | 3.35 | 0.6 | 220 | N/A | N/A(58) | RF magnetron sputtering | [61] |
|
Table 2. Summary of relevant parameters for BEUV multilayers