Xiaoran Li, Hetao Tang, Jiaoling Zhao, Fenghua Li. Research Progress of Beyond Extreme Ultraviolet Multilayers at 6.X nm[J]. Chinese Journal of Lasers, 2024, 51(7): 0701010

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- Chinese Journal of Lasers
- Vol. 51, Issue 7, 0701010 (2024)

Fig. 1. Trend for the development of lithographic light sources regarding wavelength
![Schematic of the main optical components in an EUV lithography system[30]](/richHtml/zgjg/2024/51/7/0701010/img_02.jpg)
Fig. 2. Schematic of the main optical components in an EUV lithography system[30]

Fig. 3. Schematic view of Bragg diffraction for PMMs
![Real and imaginary parts of the refractive index at 6.7 nm for typical elements (original data obtained from Lawrence Berkeley National Laboratory)[38]](/Images/icon/loading.gif)
Fig. 4. Real and imaginary parts of the refractive index at 6.7 nm for typical elements (original data obtained from Lawrence Berkeley National Laboratory)[38]

Fig. 5. Calculated results of La/B4C multilayers. (a) Reflectivity curve; (b) curve of reflectivity changing with number of periods; (c) curve of reflectivity variation with substrate roughness

Fig. 6. Calculated results of La/B4C multilayers. (a) Variation of central wavelength of multilayers with different periodic thicknesses; (b) variation of peak reflectivity of multilayers with different interface widths
![Schematic of La/B4C multilayers with barrier layer of carbon[55]. (a) Structures of La/B4C with carbon barrier layer inserted on different interfaces; (b) zoomed-in depth profiles of La+ measured by using TOF-SIMS (reprinted and adapted from Ref. [55] with permission from Elsevier)](/Images/icon/loading.gif)
Fig. 7. Schematic of La/B4C multilayers with barrier layer of carbon[55]. (a) Structures of La/B4C with carbon barrier layer inserted on different interfaces; (b) zoomed-in depth profiles of La+ measured by using TOF-SIMS (reprinted and adapted from Ref. [55] with permission from Elsevier)
![Experiments on the nitridation of La/B interface[7]. (a) Schematic of La/B-based multilayer prepared by using the delayed nitridation method; (b) calculated peak reflectivity for LaN/B multilayers, with BN and LaB6 as interlayers on the LaN-on-B interface (adapted with permission from Ref. [7] © The Optical Society)](/Images/icon/loading.gif)
Fig. 8. Experiments on the nitridation of La/B interface[7]. (a) Schematic of La/B-based multilayer prepared by using the delayed nitridation method; (b) calculated peak reflectivity for LaN/B multilayers, with BN and LaB6 as interlayers on the LaN-on-B interface (adapted with permission from Ref. [7] © The Optical Society)
![Annealing experiments for La/B4C and LaN/B4C multilayers[65]. (a) Period thicknesses of the La/B4C and LaN/B4C multilayer, for annealing temperatures up to 800 ℃; (b) EUV reflectance curves of the La/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively; (c) EUV reflectance curves of the LaN/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively (reprinted and adapted from Ref. [65] with permission from Elsevier)](/Images/icon/loading.gif)
Fig. 9. Annealing experiments for La/B4C and LaN/B4C multilayers[65]. (a) Period thicknesses of the La/B4C and LaN/B4C multilayer, for annealing temperatures up to 800 ℃; (b) EUV reflectance curves of the La/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively; (c) EUV reflectance curves of the LaN/B4C multilayer right after deposition, and after annealing to 400 ℃ and 800 ℃, respectively (reprinted and adapted from Ref. [65] with permission from Elsevier)
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Table 1. Advantages and disadvantages of different BEUV light sources
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Table 2. Summary of relevant parameters for BEUV multilayers

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